Numerical simulation of the electron traps effect created by neutron irradiation on $$p^+-n-n^+$$ GaAs solar cell performance

Laiadi, W.; Meftah, Afak; Sengouga, Nouredine

doi:10.1007/s12648-020-01864-7

Indian J Phys

2020

DOI: 10.1007/s12648-020-01864-7

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Numerical simulation of the electron traps effect created by neutron irradiation on $$p^+-n-n^+$$ GaAs solar cell performance

W. Laiadi

Afak Meftah

Nouredine Sengouga

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2024

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Photon emission microscope analysis on surface defects of GaAs thin-film solar cells grown by molecular beam epitaxy

Chen,

Bao,

et al. 2024

Jpn. J. Appl. Phys.

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Surface defects seriously affect the electronic properties of the optoelectronic devices. In this paper, the surface defect analysis of GaAs thin-film solar cells grown by molecular beam epitaxy (MBE) is carried out by photon emission microscope (PEM). Two types of oval defects at the locations of the luminous spots are observed. The morphology and chemical composition analysis indicate that GaAs dust contamination on the wafer surface and excessive As clusters are the origins of oval defects. The electrical property analysis shows that oval defects in the epitaxial layer should be one of the important reasons for the nonideal leakage current of the GaAs thin-film solar cell.

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Photon emission microscope analysis on surface defects of GaAs thin-film solar cells grown by molecular beam epitaxy

Chen,

Bao,

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

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Numerical simulation of the electron traps effect created by neutron irradiation on $$p^+-n-n^+$$ GaAs solar cell performance

Cited by 1 publication

References 32 publications

Photon emission microscope analysis on surface defects of GaAs thin-film solar cells grown by molecular beam epitaxy

Photon emission microscope analysis on surface defects of GaAs thin-film solar cells grown by molecular beam epitaxy

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