Millimeter-wave diagnostics have proven effective on various
magnetic fusion devices worldwide, yet the formidable challenges
posed by the harsh environments of future burning plasma devices,
characterized by extreme temperatures, pressures, and radiation
levels, remain a significant hurdle. To address these challenges,
the utilization of wide bandgap Gallium Nitride (GaN)-based
millimeter-wave diagnostics is a most promising solution for fusion
reactor safety monitoring and control. A noteworthy W-band GaN-based
system-on-chip receiver has been the demonstrated by employing HRL
T3 40 nm GaN technology. This receiver chip, compactly designed
with dimensions of 3 × 5 mm2, incorporates essential
components such as the 75–110 GHz RF Low-Noise Amplifier (LNA),
mixer, Intermediate Frequency (IF) amplifier, and Local Oscillator
(LO) chain. This receiver chip will be packaged as a millimeter-wave
receiver module and applied on the DIII-D National Fusion Facility,
for fusion plasma edge shape monitoring for operational safety and
dangerous disruption prediction. The laboratory measurement results
have demonstrated suitable performance. This advancement is pivotal
for accurate analysis of plasma behavior in the extreme conditions
of burning plasma devices, driving progress in fusion research and
technology.