Numerical Simulation on Thickness Dependency and Bias Stress Test of Ultrathin IGZO Thin‐Film Transistors Via a Solution Process

Labed, Mohamed; Sengouga, Nouredine; Kim, Kyung Hwan; Rim, You Seung

doi:10.1002/pssa.201800987

Cited by 9 publications

(6 citation statements)

References 37 publications

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“…There are four main DOSs in the band‐gap region, which are conduction tail ( g ct (E) ), valence tail ( g vt (E) ), donor‐like Gaussian states ( g Gd (E) ), and acceptor‐like Gaussian states ( g Ga (E) ). [ 23 ] Those DOS equations and physical parameters determined by fitting to the experimental data are listed in Equations (S2)–(S5) and Table S3 (Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Zhang

Chang

et al. 2022

Adv Materials Inter

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Researchers have made various attempts to improve the sputtering a-IGZO films. [2] However, the structural defects induced by the sputtering process often lead to inferior performance and stability for a-IGZO devices, especially under voltage stress. [9] Poor-quality of a-IGZO film has hindered the development of commercial applications for a-IGZO thin film transistor (TFT)based electronics. [10][11][12] Many post-treatments such as annealing, [13] microwave irradiation, [14] plasma treatment, [15][16][17] and supercritical carbon dioxide fluid (SCCO 2 ) treatment [18,19] have been implemented to improve a-IGZO film quality. Compared with other methods, SCCO 2 method is more promising due to its low-temperature process, nondestructive property, ability to remove organic impurities, and restorability from bending. Earlier work [18] has studied the enhancing effect of this treatment on flexible a-IGZO devices. To gain maximum advantage of such technique, an understanding of the carrier mechanism beyond the performance enhancement is important. From oxygen vacancy (V o ) theory, two kinds of V o could exist in the a-IGZO film, namely traps and carriers. [20] The independent analysis for carrier-type V o and trap-type V o has not been verified in detail. Furthermore, the carrier transport mechanism of the post-treated a-IGZO film has not been fully understood yet. These are critical to understand the a-IGZO and realize high-performance devices and circuits based on metal oxide semiconductors.In this work, we design a-IGZO TFTs with different channel thicknesses and treat them using SCCO 2 process to investigate the detailed mechanism of the carrier behavior inside the a-IGZO layer. By comparing the performances of different devices, we analyze the carrier density and transport in a-IGZO. In addition to the traditional X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) characterization, new techniques including Technology Computer Aided Design (TCAD) simulation, layer-by-layer XPS, and sheet resistance measurement are adopted in TFTs for the first time to verify the more accurate carrier mechanism.Amorphous indium gallium zinc oxide (a-IGZO) thin-film quality can be enhanced using supercritical carbon dioxide (SCCO 2 ). How to verify specific and accurate mechanism for the carriers inside an a-IGZO layer before and after the SCCO 2 treatment is worth investigating. This work designs a-IGZO thin film transistors with different channel thicknesses (41, 28, and 19 nm), treats them using SCCO 2 , and analyzes the change in carrier behavior. The effect of the SCCO 2 on both carrier density and carrier transport is investigated using energy band information, Technology Computer Aided Design (TCAD) simulations on density of states and resistance analyses. After the treatment, the thinner channel thickness exhibits better drivability enhancement. That is because of the fewer traps and smoother carrier transportation path resulted from better M−O−M frameworks, and decreased M−OH bonds as ...

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Section: Resultsmentioning

confidence: 99%

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Zhang

Chang

et al. 2022

Adv Materials Inter

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“…Simulated results showed agreement with previous reported thermotical as well as experimental data in the literature. 36 The main observation from Figure 2 is that Si-based TFTs can conduct much higher current than IGZO-based TFTs, while both Si and a-IGZO have negative threshold voltage as the TFETs work typically in the accumulation regime. The drain current associated with the Si-based TFT is plotted in the left vertical axis while that for IGZO is on the right side, where nearly a higher two order of magnitude current is observed for Si.…”

Section: Tft Simulation Modelmentioning

confidence: 98%

“…Regardless of the much higher drain current, a-IGZO TFTs is mostly used in the electronics industry due to its low temperature, simple deposition either on glass or flexible substrate compared to a-Si. 6,[29][30][31][32][34][35][36]38,43 Additionally, a-IGZO TFTs recorded better performance than Si-based TFTs, in-terms of SS as well as I on/off (Table 3). Alternatively, traditional Si-based TFT 11 has recorded limitations concerning the sophisticated fabrication process.…”

Section: Tft Simulation Modelmentioning

confidence: 99%

“…The input material parameters for IGZO and silicon are captured from the literature and listed in Table 2. 36,41,42 Source and drain contacts are set to be ohmic contacts, while gate contact work function is adjusted to be 4.1 V. The relative permittivity of the dielectric layer is fixed to 4.5.…”

Section: Tft Simulation Modelmentioning

confidence: 99%

“…In this study fabricated TFTs as well as numerically simulated ones were evaluated. 36 However, the study did not include other parameters effect on the TFTs I-V characteristics such as doping as well as oxide permittivity. The influence of the effective mass and the trapping density in IGZO was discussed in Reference 37.…”

Section: Introductionmentioning

confidence: 99%

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Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Hussien

Abdellatif

2021

Int J Numerical Modelling

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Thin film transistors (TFTs) are ranked as one of the promising field-effect transistors in the electronic industry. TFTs showed a great potential in many applications where liquid crystal displays, touchscreens, and biosensors are of the leading. In the current study, we are demonstrating a numerical carrier transport model based on finite element method (FEM), to investigate InGaZnO (IGZO) based TFTs. Amorphous silicon TFT has been simulated as a bare device. The impact of scaling down the dimension of the TFT, up to 30 nm channel length, on the output performance characteristics of the transistor has been addressed. Additionally, the effects of active semiconductor layer doping concentration and oxide layer thickness have been investigated. Moreover, a novel approach is introduced to correlate the selected input design parameters with a set of characteristic outputs including threshold voltage, on/off current ratio, and subthreshold swing. The proposed model correlates input and outputs using a characteristic matrix with nine coefficients, making it possible to predict, that is, interpolate, the characteristic outputs within the system boundaries. The suggested model was verified with respect to input data as well as data from the literature showing a very acceptable agreement.

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36.1: Invited Paper: Innovations in Thin Film Electronics for the New Generation of Displays

Brewer¹

2023

Symp Digest of Tech Papers

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Improvements in semiconductor materials carried Moore's Law into the 1990s, where device geometries and limits in materials performance drove the need for fundamental innovation at the materials and structural levels of MOSFETs. The display industry has reached a similar point the need for fundamental innovation at the materials and structural levels of thin film transistors. Successful transition to a higher plateau of thin film device technology enables a new inflection point in the use of displays just as the FinFET was the foundation for an inflection point in the use of microprocessors.This paper provides an overview of two thin film technology innovations offering promise as the next two plateaus in the evolution of thin film integrated circuit manufacturing: achieving bulk accumulation in single gate metal oxide semiconductor thin film transistors, and semiconductor less quantum tunneling. Linked through a single core materials set based on strong yet flexible amorphous metals, these two innovations create a roadmap simplifying the manufacturing of high image quality, low power consumption displays on glass and plastic.

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Numerical Simulation on Thickness Dependency and Bias Stress Test of Ultrathin IGZO Thin‐Film Transistors Via a Solution Process

Cited by 9 publications

References 37 publications

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

36.1: Invited Paper: Innovations in Thin Film Electronics for the New Generation of Displays

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