2016 8th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) 2016
DOI: 10.1109/uwbusis.2016.7724185
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Numerical simulations of transferred-electron devices based on graded-gap semiconductor nitrides with boron nitride for terahertz range

I. P. Storozhenko
1
,
A. N. Yaroshenko
2
,
Yu. V. Arkusha
3
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