Numerical spurious solutions in the effective mass approximation

Cartoixà, Xavier; Ting, David Z.; McGill, T. C.

doi:10.1063/1.1555833

Cited by 48 publications

(26 citation statements)

References 44 publications

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“…In particular, this avoids the case where the LH band would create an X valley in the gap region that might originate spurious superlattice bands. 26 A good procedure to avoid these complications would be to create a plot as in Fig. 2 for each of the constituent bulk materials, and to make sure that the LH-HH crossing does not take place.…”

Section: Bulk Band Structurementioning

confidence: 99%

Description of bulk inversion asymmetry in the effective-bond-orbital model

2003

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We have extended the effective-bond-orbital model ͑EBOM͒ method ͓Y. C. Chang, Phys. Rev. B 37, 8215 ͑1988͔͒ to include the effects of the bulk inversion asymmetry ͑BIA͒ present in zinc blendes. This is accomplished without adding to the number of basis states or extending the range of interaction. We have also investigated a variant form of the EBOM proposed in the original formulation that offers improved zone-center behavior, but may also generate spurious solutions in heterostructure calculations due to poor description of bulk zone-boundary band structure. We offer suggestions for avoiding this problem so that this variant form of EBOM may be used safely. In general, we find that the addition of BIA effects in EBOM results in improved descriptions of zone-center band structure, but also in a loss of accuracy far from the Brillouin-zone center. We illustrate the use of the BIA extension with band-structure calculations for bulk GaSb. We show that the spin splitting predicted by the extended EBOM method for an AlSb/GaSb superlattice is in good agreement with k•p calculations that include BIA effects.

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Section: Bulk Band Structurementioning

confidence: 99%

Description of bulk inversion asymmetry in the effective-bond-orbital model

2003

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“…The g factors were determined by computing the Zeeman energy splittings in a uniform magnetic field, coupled to both the Bloch and envelope functions [23,24]. Spurious midgap states [25,26] were eliminated by including an optimized second-nearest-neighbor term [27]. The externally applied strain was included by introducing a fictitious stressor material at the bottom of the computational grid with a modified lattice constant.…”

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confidence: 99%

Strain-inducedg-factor tuning in single InGaAs/GaAs quantum dots

et al. 2016

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“…All the parameters used in this paper are listed in Table I. To avoid the spurious solutions arising from eight-band k · p method with finite difference method, 36 we use the parameters for electronic structures ͑spin-orbit coupling energies, optical matrix parameters, electron effective masses, and Luttinger parameters͒ reported by Lawaetz. 37…”

Section: Electronic Structuresmentioning

confidence: 99%

Anisotropic enhancement of piezoelectricity in the optical properties of laterally coupled InAs/GaAs self-assembled quantum dots

et al. 2009

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We investigated the electronic and optical properties of self-assembled laterally double InAs/GaAs quantum dots coupled along the ͓110͔ and ͓110͔ directions with varying interdot distances. The coupling region provides a stronger confinement for both electrons and holes than in the center of each dot due to the weak compressive strain and positive biaxial strain in the region. The lateral coupling along the ͓110͔ ͓͑110͔͒ direction enhances the negative ͑positive͒ piezoelectric potential in the coupling region and lowers ͑raises͒ the potential in the middle of each dot. As a result, the piezoelectric potential decreases the splitting between the two transitions from the bonding s orbitals to the two coupled p orbitals in quantum dots coupled along the ͓110͔ direction and increases the splitting in the quantum dots coupled along the ͓110͔ direction. The direction of coupling is clearly distinguishable by the polarization of intraband transition since most transitions are polarized along the axis passing through the two dots. Lateral coupling enhances the polarization anisotropy of interband absorption spectra. In the presence of the piezoelectric potential, quantum dots coupled along the ͓110͔ direction exhibit larger redshift of the lowest exciton energies when the distance between the two dots is sufficiently close and have smaller exciton binding energies than quantum dots coupled along the ͓110͔ direction.

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Numerical spurious solutions in the effective mass approximation

Cited by 48 publications

References 44 publications

Description of bulk inversion asymmetry in the effective-bond-orbital model

Description of bulk inversion asymmetry in the effective-bond-orbital model

Strain-inducedg-factor tuning in single InGaAs/GaAs quantum dots

Anisotropic enhancement of piezoelectricity in the optical properties of laterally coupled InAs/GaAs self-assembled quantum dots

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