A universal method for improving sensing performance has been computationally studied based on a common triple-layer metal-dielectric-metal (MDM) plasmonic perfect absorber (PA). Calculation results show that the originally idled resonant optical field in the middle dielectric spacer can be exploited to enhance the sensing capability via etching the dielectric spacer to open a channel for analyte. By comparing with the sensitivity (S) of the common PA-based sensor, an enhancement factor up to 5.0 can be achieved for an etched PA-based sensor. Moreover, in order to maintain the mechanical stability of the structure, a modified PA-based sensor platform with a solid support for the suspended plasmonic disks array was further employed to study the sensing properties. In comparison with the referenced sensor without suspension technique, all the three sensing factors of the S, the figure of merit (FOM), and the spectral intensity difference related figure of merit (FOM*) are noticeably improved with the enhancement factors up to 2.5, 3, and 57, respectively. In addition, since there is no special dealing with the structure except the need of hollowing the dielectric spacer to open the sensing channel for the analysis, the predicted method profiles itself as a simple and universal strategy to improve the sensing performance of a wide variety of nanoplasmonic sensors.