Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation

Abstract

The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) based perovskite solar cell was proposed and implemented using solar cell capacitance simulator (SCAPS–1D) tool. Aluminium doped zinc oxide (ZnO:Al) and Copper Iodide (CuI) were used as electron and hole transport layers (ETL and HTL) respectively. The initial device without any optimization gave a power conversion efficiency (PCE) of 24.826%, fill factor (FF) of 86.336%, short circuit current density (Jsc) of 26.174 mA/cm2 and open circuit voltage (Voc) of 1.099 V. On varying the aforementioned parameters individually while keeping others constant, the optimal values are 1000 nm for absorber thickness, 1014 cm-3 for absorber layer defect density, 50 nm for ETL thickness, 1017 cm-3 for ETL doping concentration and 260 K for temperature. Simulating with these optimized values results to PCE of 25.459%, Voc of 1.145 V, Jsc of 25.241 mA/cm2, and a FF of 88.060%. These results indicate that the CsSnGeI3 is a viable alternative absorbing layer for usage in the design of a high PCE perovskite solar cell device.

Modeling and Simulation of MAPbI3-Based Solar Cells with SnS2 as the Electron Transport Layer (ETL) and MoS2 as the Hole Transport Layer (HTL)

“…These values were obtained with a 20 nm thick molybdenum disulfide (MoS 2 ) hole transport layer (HTL). These findings highlight the significance of fine-tuning the HTL thickness to attain superior performance in perovskite crystalline solar cells …”

“…These findings highlight the significance of fine-tuning the HTL thickness to attain superior performance in perovskite crystalline solar cells. 44 In perovskite solar cells, the electron transport layer (ETL) expedites electron movement from the absorber layer to the front contact, significantly supporting the increase in the device's overall efficiency. 43 Figure 4 shows the effect of varying the thickness of the electron transport layer (ETL) from 5 to 50 nm on the performance parameters of ITO/SnS 2 / MAPbI 3 /MoS 2 /Au structure.…”