Numerical study of AgInTe₂ solar cells using SCAPS

Theoretical insights into a high-efficiency Sb2Se3-based dual-heterojunction solar cell

“…The detail qualitative discussion of the TSA upconversion process can be perceived in other work ( Mostaque et al., 2022 ). Fortunately, AgInTe 2 is a chalcopyrite material comprising a band gap of 1.16 eV ( Malinkiewicz et al., 2014 ), high absorption coefficient of 10 3 cm −1 in the wavelength of 1800 nm (obtained from SCAPS extrapolation utilizing absorption coefficient data from experimental work) ( Benseddik et al., 2020 ; El-Korashy et al., 1999 ) and also possesses high carrier concentration of 3.66 × 10 19 cm 3 ( Yang et al., 2017 ). All of these factors make AgInTe 2 a suitable candidate to participate in a TSA upconversion process.…”

“…Hence, it creates a possibility for n-type ZnSe and p-type Sb 2 Se 3 to build a favorable pn junction. In addition, AgInTe 2 is a semiconducting compound having a direct band gap of 0.96–1.16 eV which has already been reported as absorber layer with CdTe window combination ( Benseddik et al., 2020 ). In this design, p + -type AgInTe 2 has been employed to perform double role such as bottom absorber and back surface field (BSF) layer.…”

“… Parameters ITO ( Ahmmed et al., 2020 ) n -ZnSe ( Olopade et al., 2012 ; Samantilleke et al., 1998 ) p -Sb 2 Se 3 (Z. Q. Li et al., 2019 ) p + -AgInTe 2 ( Benseddik et al., 2020 ; El-Korashy et al., 1999 ; Yang et al., 2017 ) Layer type Substrate Window Absorber BSF a Thickness [μm] 0.05 0.1 1.0 0.5 Band gap, [eV] 3.6 2.7 1.2 1.16 Electron affinity, χ [eV] 4.5 4.09 4.04 3.6 Dielectric permittivity, ε [relative] 8.9 10 18 8.9 Effective CB density, N C [cm −3 ] 2.2×10 18 1.5×10 18 2.2×10 18 3.66×10 19 Effective VB density, N V [cm −3 ] 1.8×10 19 1.8×10 19 1.8×10 19 1.35×10 19 Electron mobility, [cm 2 V −1 s −1 ] 50 50 15 1011 Hole mobility, [cm 2 V −1 s −1 ] 10 20 5.1 887 ...…”

“…Similar concepts have been found to overcome SQ limit for dual-heterojunction solar cells ( Martí and Luque, 2015 ). AgInTe 2 is a potential ternary chalcopyrite material exhibiting a band gap of 0.96–1.16 eV which is just below the band gap of Sb 2 Se 3 ( Benseddik et al., 2020 ; El-Korashy et al., 1999 ). Such a value along with high absorption coefficient (4×10 4 cm −1 at an wavelength of 1095 nm) and also sub-band gap effects have brought it as a suitable candidate for back surface absorber layer ( El-Korashy et al., 1999 ).…”

Electronic structure and optical properties of the Ag3SbS3 crystal: experimental and DFT studies

“…They are used in optoelectronics, 6,7 nonlinear optics, [8][9][10] sensor technology, 11 and the energy industry. [12][13][14] Considerable attention is paid to ternary multicomponent materials of the I 3 -V-VI 3 group, where I = Ag, Cu; V = As, Sb, Bi; VI = S, Se. The materials of this group are promising for use in electronics, nonlinear optics, and photovoltaics as an absorbing layer of solar cells.…”