2021
DOI: 10.1080/09500340.2021.1885760
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Numerical study of carrier reservoir semiconductor optical amplifier-based all-optical XOR logic gate

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Cited by 19 publications
(13 citation statements)
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“…Illustrated in Figure 1a [7][8][9], the generation of the carrier reservoir (CR) layer adjacent to the active region (AR) in CR-SOAs is outlined. In a manner analogous to quantum dot (QD)-SOAs (See Figure 1b) [19,20], CR-SOAs exploit the concept of a "carrier reservoir" to augment their operational speed, albeit through a distinct physical mechanism.…”
Section: Cr-soamentioning
confidence: 99%
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“…Illustrated in Figure 1a [7][8][9], the generation of the carrier reservoir (CR) layer adjacent to the active region (AR) in CR-SOAs is outlined. In a manner analogous to quantum dot (QD)-SOAs (See Figure 1b) [19,20], CR-SOAs exploit the concept of a "carrier reservoir" to augment their operational speed, albeit through a distinct physical mechanism.…”
Section: Cr-soamentioning
confidence: 99%
“…As the bias current intensifies, the quasi-Fermi level progresses beyond the AR band edge. Consequently, the CR becomes infused with carriers, allowing it to promptly supply the AR-depleted by an input optical signal-with carriers during a transition time estimated to be between 5 and 10 ps [7][8][9]. The dominance of this ultrafast transition governs the gain dynamics, causing the CR-SOA to exhibit an equally swift temporal gain and phase response, mirroring that of the QD-SOA.…”
Section: Cr-soamentioning
confidence: 99%
See 2 more Smart Citations
“…The simulation of their design is performed with data rate of 160 Gb/s. Ktob et al [8] proposed and simulated carrier reservoir SOA-based (CR-SOA) XOR logic gate at the rate 100 Gbps. Mohammadian et al [9] proposed XOR gate using ring resonator with microelectromechanical systems.…”
Section: Introductionmentioning
confidence: 99%