Numerical Study of Cu2O, SrCu2O2, and CuAlO2 as Hole‐Transport Materials for Application in Perovskite Solar Cells

Shasti, Mona; Mortezaali, A.

doi:10.1002/pssa.201900337

Cited by 63 publications

(44 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 45,46 ] This software is used to design and simulate the electrical properties of any heterostructure thin film device up to seven layers. [ 47,48 ] It is already tested on CdTe and CIGS solar cells, whose simulation results and calculations were well in line with the realistic situation. [ 48,49 ] This program requires significant number of semiconductor parameters and optical parameters [ 46 ] such as conduction band effective density of states ( N c ), valence band effective density of states ( N v ), bandgap ( E g ), electron affinity ( χ ), dielectric permittivity ( ϵ r ), electron mobility ( μ e ), hole mobility ( μ h ), donor density ( P d ), acceptor density ( P a ), radiative recombination coefficient ( R a ), defect density ( N t ), and absorption coefficient ( α ).…”

Section: Device Structure and Simulation Parametermentioning

confidence: 69%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

This article discusses the numerical analysis of heterojunction photovoltaic cells based on cadmium telluride (CdTe) using the SCAPS‐1D software. A novel glass/FTO/SnO2/CdS/interdiffusion/CdTe/SnS2/Se photovoltaic cell design is proposed for investigation. Additionally, the effect of thickness variation in the p‐type CdTe film, thickness variation in the interdiffusion layer, defect density in the CdTe film, defect density in the interdiffusion layer, and acceptor concentration in the CdTe layer is studied in order to improve the photovoltaic cell's efficiency. The study determines an optimal thickness of 1 and 0.6 μm for the CdTe and interdiffusion layers, respectively, a defect density of 1 × 1014 cm−3 for the CdTe film and interdiffusion region, an interface defect density of 1 × 1010 cm−3 between CdTe/interdiffusion, SnS2/CdTe, and CdS/interdiffusion, and an acceptor concentration value of 8.5 × 1015 cm−3. The optimized CdTe photovoltaic cell structure with current density (Jsc) = 30.003 mA cm−2, open‐circuit voltage (Voc) = 1.061 V, and fill factor (FF) = 88.10% achieves a 28.07% efficiency, compared to the baseline CdTe photovoltaic cell structure with a 23.01% efficiency.

show abstract

Section: Device Structure and Simulation Parametermentioning

confidence: 69%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…[53] The work functions were 5.2 and 4.4 eV for the indium tin oxide (ITO) and Al contacts, respectively. [54] A background p-type doping of 10 14 cm À3 was assumed in the MAPI, along with a neutral SRH recombination center having a density of 3 Â 10 16 cm À3 and a capture cross section of 10 À17 cm 2 , to correspond approximately to the 1.1 V V oc and 18% PCE achieved by the solar cells.…”

Section: Modeling and Discussionmentioning

confidence: 99%

Temperature‐ and Bias‐Dependent Degradation and Regeneration of Perovskite Solar Cells with Organic and Inorganic Hole Transport Layers

Swartz

Khakurel

Najar

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

Hybrid halide perovskite solar cells have drawn widespread attention with the achievement of high power conversion efficiencies. However, poor stability remains the greatest barrier preventing their commercialization. Performance degradation and recovery have a complicated dependence on the environment and a dependence on the applied bias, which affects ion migration. Herein, solar cells with an organic hole transport layer and cells with an inorganic hole transport layer are compared. A type of degradation of the organic transport layer is examined, which is reversible by applying a forward bias soak, and how the degradation arises from ion migration mechanisms is explained. Experimental current–voltage and capacitance transient measurements are conducted as a function of temperature. The resulting S‐kink and positive capacitance decay are explained in terms of the modeled effects of a changing ion density at the hole transport layer. An irreversible degradation is found upon heating to more than 100 °C. On the contrary, the inorganic hole transport layer is found to eliminate the observable effects of ion migration, even at elevated temperatures, so long as air exposure is avoided.

show abstract

“…(Zn 3 P 2 ) [41] (NiO) [42] (MoS 2 ) [43] (SrCu 2 O 2 ) [44] (CuAlO 2 ) [44] Thickness (SnS 2 ) [45] (STO) [46] (PCBM) [46] (SnO 2 ) [42] MZO [47] Thickness To measure the carrier current density at the same time, the equations are given below [31] J h ¼ qnμ h E À qD h ∂h ∂y (4)…”

Section: Glassmentioning

confidence: 99%

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

2021

View full text Add to dashboard Cite

Today, the global world is concerned about the rapidly depleting fossil fuel reserves and the serious consequences of these fossil fuels on the environment have prompted an increase in interest in the development of clean and renewable energy sources. Currently, numerous inexhaustible power options, such as solar power, wind power, biomass, etc., are being implemented in the market. However, solar energy is abundant in our environment and is a safe and clean source of energy. As a result, considerable efforts were made in the development of advanced photovoltaic technology to achieve higher power conversion efficiency (PCE) and lower processing costs. In the last 10 years, technological advancements in organic-inorganic halide perovskite solar cells (PSCs) have demonstrated increased absorption coefficient, extended carrier-diffusion length, [1,2] improved carrier mobility, [3,4] ease of fabrication in a variety of areas, and the ability to meet photovoltaic application and space application requirements. [5][6][7] The Pbbased PSC device was initially developed by Kojima et al., who pioneered PSC research and reported a PCE of up to 3.8%. [8] Numerous studies conducted over the last decade have focused on Pb-based PSC devices as a light-absorbing material and have achieved an efficiency of approximately 25.2% in 2019. [9][10][11] The conventional formula of this device structure is ABX 3 which contains an organic methyl ammonium (CH 3 NH 3 þ ) [12] or formamidinium (NH ¼ CHNH 3 þ ) ion [13] and an inorganic element such as Pb, Ge, or Sn. [14,15] Despite its increased efficiency, the problem with this structure is its instability and toxicity, which prevents it from being used commercially. [16] To overcome these difficulties, germanium (Ge) can be used as a perovskite material to provide analogous optoelectronic properties to the PSC. Furthermore, Ge is a far superior contender in terms of stability and environmental friendliness. [17,18] Ge-based PSC devices are more thermally stable in the active layer than lead-based PSC devices, resulting in less material deterioration. [19,20] In the past, different researchers have synthesized Ge-based PSC devices. In 2013, Stoumpos et al., discovered unique nonlinear optical characteristics and a very unconventional structure in the Ge-based perovskite. [21] Following the synthesis of lead-free Ge perovskite materials in 2015, Krishnamoorthy et al. noticed that this class of photovoltaic materials showed a high potential for use in solar panels. [22] Recently, Kanoun et al. and Lakhdar et al. demonstrated computational analysis of the germanium structure of PSC devices, demonstrating an increase in the device's efficacy. [17,23] While researchers have demonstrated an increase in efficiency, the solar cell's current density ( J sc ) is extremely low, and a higher current density is required for the future of Ge-based perovskite solar cells (GBPSCs) with increased efficacy too.The GBPSC is constructed with an absorbance layer of germanium perovskite sandwiched between the ...

show abstract

Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells

Cited by 63 publications

References 59 publications

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Temperature‐ and Bias‐Dependent Degradation and Regeneration of Perovskite Solar Cells with Organic and Inorganic Hole Transport Layers

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

Contact Info

Product

Resources

About

Numerical Study of Cu2O, SrCu2O2, and CuAlO2 as Hole‐Transport Materials for Application in Perovskite Solar Cells

Cited by 63 publications

References 59 publications

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Temperature‐ and Bias‐Dependent Degradation and Regeneration of Perovskite Solar Cells with Organic and Inorganic Hole Transport Layers

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn3P2 and SnS2 as Charge Transport Layer Materials

Contact Info

Product

Resources

About

Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials