Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency

Ghosh, Bablu K.; Nasir, Syafiqa; Chee, Fuei Pien; Routray, Soumyaranjan; Saad, Ismail; Mohamad, Khairul Anuar

doi:10.1016/j.optmat.2022.112539

Cited by 8 publications

(2 citation statements)

References 24 publications

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“…The physical, optical, and electrical parameters were obtained from the scientific literature and summarized in Table 1 (Basyoni et al, 2021;A. Ghosh et al, 2020;B. Ghosh et al, 2022;Jamal et al, 2019;Sabbah et al, 2022).…”

Section: Simulation Parametersmentioning

confidence: 99%

Design of a p-i-n type inverted perovskite solar cell using SiOx as down-conversion material to improve PCE: Simulation and optimization in SCAPS-1D

Paz-Totolhua

2023

JRE

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In this research work, an inverted p-i-n type perovskite solar cell: ITO/PEDOT: PSS/CH3NH3PbI3/PCBM/Au has been simulated and optimized in SCAPS-1D. The optimized parameters in SCAPS-1D that improved solar performance were: perovskite thickness, the total defect density of perovskite, the total defect density of interfaces, series and shunt resistances, and device operating temperature. As a result, the efficiency (PCE) increased to 18.33%. Subsequently, when the silicon-rich oxide (SiOx) material was implemented in the simulation as downconversion energy material on the outside of the cell, a power conversion efficiency (PCE) of 23.7% was obtained. The SiOX film obtained experimentally by sputtering obtained good photoluminescence, absorption coefficient, band gap, and transmittance characteristics before and after thermal annealing. These characteristics have been considered for the proposed device. It is indicated that the inverted perovskite solar cell of type pi-n: SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Au has better J-V output values and EQ quantum efficiency than the perovskite solar cell without SiOx.

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Section: Simulation Parametersmentioning

confidence: 99%

Design of a p-i-n type inverted perovskite solar cell using SiOx as down-conversion material to improve PCE: Simulation and optimization in SCAPS-1D

Paz-Totolhua

2023

JRE

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“…Previous research has found that Si 0.5 Ge 0.5 grown by chemical vapor deposition exhibits an optical bandgap of approximately 1 eV, with high defect concentration at lower growth temperatures [14]. Si solar cell is realized to have the best module efficiency, with both chemically and electrically appealing designs for the aSi:H buffer and emitter, as well as metal oxide back passivation [15]. In this research, the structural and optical characterization for both Si 0.8 Ge 0.2 and Si 0.9 Ge 0.1 were analyzed.…”

Section: Introductionmentioning

confidence: 99%

Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films

Nasir

Chee²,

Ghosh

et al. 2023

Crystals

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This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si0.8Ge0.2 and Si0.9Ge0.1 films were deposited onto a high-temperature quartz substrate and annealed at 600 °C, 700 °C, and 800 °C before being evaluated using an X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM), and a UV-Vis Spectrometer for structural and optical properties. The results show that increasing the annealing temperature results in an increase in crystalline size for both compositions. The transmittance for Si0.8Ge0.2 decreases slightly with increasing temperature, while Si0.9Ge0.1 remains constant. The optical band gap for Si0.9Ge0.1 thin film is 5.43 eV at 800 °C, while Si0.8Ge0.2 thin film is 5.6 eV at the same annealing temperature. XRD data and surface analysis reveal significant differences between the band edges of SiGe nano-structure materials and bulk crystals. However, the possibility of a SiGe nano-crystal large band gap requires further investigation based on our study and related research works.

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Modeling and analysis of a bias-free hydrogen production approach using perovskite photocathode and lignocellulosic biomass

Zhai,

Li,

et al. 2023

Energy Conversion and Management

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Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency

Cited by 8 publications

References 24 publications

Design of a p-i-n type inverted perovskite solar cell using SiOx as down-conversion material to improve PCE: Simulation and optimization in SCAPS-1D

Design of a p-i-n type inverted perovskite solar cell using SiOx as down-conversion material to improve PCE: Simulation and optimization in SCAPS-1D

Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films

Modeling and analysis of a bias-free hydrogen production approach using perovskite photocathode and lignocellulosic biomass

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