Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe

Tena‐Zaera, Ramón; Mora‐Seró, Iván; Martı́nez-Tomás, C.; Muñoz‐Sanjosé, V.

doi:10.1016/s0022-0248(02)00919-3

Cited by 6 publications

(8 citation statements)

References 19 publications

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“…The only difference that can be observed from the simulations is that the CdTe growth thickness changes with the total flux. This result is also consistent with the experimental data and previous study as reported by Tena-Zaera et al [14].…”

Section: Effect Of the Total Flux On Cdte Growth Ratesupporting

confidence: 94%

“…Kuhn et al [13] have conducted two-dimensional numerical simulation using CFD code -Fluent to investigate the hydrodynamics in a horizontal MOCVD reactor. Tena-Zaera et al [14] also developed a 2-D model to simulate the gas flow and predict the CdTe deposition in a horizontal MOCVD reactor, coupled with heat transfer and mass transport of the chemical species. They have significantly simplified the chain of reactions presented in the CdTe deposition process and proposed to adopt a global surface reaction.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Simulation of the Deposition Process and the Epitaxial Growth of Cadmium Telluride Thin Film in a Mocvd Reactor

Yang

Huang

et al. 2013

Comput Thermal Scien

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Metalorganic Chemical Vapour Deposition (MOCVD) is an attractive method for depositing thin films of cadmium telluride (CdTe) and other group II-VI compound materials. It has been known that the growth rate of CdTe thin film is sensitive to the substrate temperature and the reactant partial pressures, indicating that the deposition process is kinetically controlled and affected by many conditions. In the deposition process, heterogeneous reactions play an important role in film formation and the process is further complicated by the coupling of gas and surface reactions via desorption of the reactive intermediates. A detailed understanding of the deposition mechanism and kinetics will be crucial for the design, optimization and scale-up of II-VI MOCVD reactors. This paper presents the results of CFD modelling of the deposition process in an inline MOCVD reactor, taking into account the heat transfer and mass transport of the chemical species. The numerical simulations have been conducted using the CFD code, ANSYS FLUENT. The influence of the process controlling parameters such as total flow rate, reactor pressure and substrate temperature on the deposition behaviour has been assessed. In the present study, dimethylcadmium (DMCd) and diisopropyltelluride (DiPTe) have been used as precursors while H 2 is acting as the carrier gas and N 2 as the flushing gas. The capabilities of using the developed CFD models for revealing the deposition mechanisms in MOCVD have been demonstrated. The simulations have been conducted in both mass transport and kinetics regimes at the temperature range of 355-455° to match the experimental conditions.

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Section: Effect Of the Total Flux On Cdte Growth Ratesupporting

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of the Deposition Process and the Epitaxial Growth of Cadmium Telluride Thin Film in a Mocvd Reactor

Yang

Huang

et al. 2013

Comput Thermal Scien

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“…CdTe epilayers oriented in the 111 direction were grown by MO-CVD on layered Gallium Sulfide (GaS) substrates, kept at 363 °C, in the reactor described in [7], using DIP-Te and DM-Cd as MO precursors. Given the Van der Waals nature of the (001) GaS surfaces, free standing small monocrystalline platelets, 1 µm and 0.8 µm thick, could be easily separated from the substrate.…”

Section: Experimental and Calculation Methodsmentioning

confidence: 99%

Electronic structure and optical properties of CdTe rock‐salt high pressure phase

Güder

Gilliland

Sans

et al. 2003

Physica Status Solidi (b)

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This paper reports on optical absorption and reflectance measurements in thin CdTe samples up to 15 GPa. All studied samples become virtually opaque at the pressure transition between the zinc-blende and rock-salt phases (3.9 GPa). As pressure increases up to 10 GPa, a relative transparency region is observed between 1.2 eV and 2.4 eV, whose high energy edge shifts to higher photon energies. Above 10 GPa the transparency region gradually shrinks and disappears at about 11 GPa. The low energy side of the absorption spectrum is attributed to free carrier absorption, as electronic structure calculations show that rock-salt CdTe is a semimetal or a low gap semiconductor. Band filling effects lower the band-toband absorption coefficient and give rise to a "transparency" range, whose upper energy side is assigned to the direct transition at the Γ point, on the basis of its pressure coefficient. The shrinking and disappearance of the transparency region, along with a large increase of the reflectance in the mid infrared, is interpreted as the occurrence of a phase transition to the Cmcm metallic phase.

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“…[5]). Free standing CdTe samples used here were 1 µm thick and could be easily separated from the GaS substrate and cut into pieces with dimensions of 100 × 100 × 1 µm 3 .…”

Section: Methodsmentioning

confidence: 99%

Pressure and temperature dependence of the band‐gap in CdTe

Gilliland

González

Güder

et al. 2003

Physica Status Solidi (b)

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In this paper we report on isothermal compression measurements (up to 5 GPa and 500 K) of the optical absorption edge of 1 μm epitaxial layers of CdTe growth by metalorganic chemical vapor deposition (MOCVD) on GaS substrates. The isothermal blue shift under pressure of the direct energy gap (Γv15 → Γc1) in the zinc‐blende phase is about 7.1 × 10–2 eV GPa–1 and is found to be independent of temperature within the experimental errors. The isobaric red shift in the stability range of the zinc‐blende phase is about –3.76 × 10–4 eV K–1. Regarding the phase transitions, no discontinuity in the energy gap has been found in the narrow pressure range where the cinnabar phase can be present. The transition pressure to the NaCl‐type structure in CdTe is found to decrease with increasing temperature (294–500 K) following the law Pt = 4.1 GPa – 6.6 × 10–3 (T – 273) (K).

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Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe

Cited by 6 publications

References 19 publications

Numerical Simulation of the Deposition Process and the Epitaxial Growth of Cadmium Telluride Thin Film in a Mocvd Reactor

Numerical Simulation of the Deposition Process and the Epitaxial Growth of Cadmium Telluride Thin Film in a Mocvd Reactor

Electronic structure and optical properties of CdTe rock‐salt high pressure phase

Pressure and temperature dependence of the band‐gap in CdTe

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