Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process

Su, Wenjia; Yang, Wei; Li, Jiulong; Han, Xiaomin; Wang, Junfeng

doi:10.1002/crat.202000180

Cited by 8 publications

(6 citation statements)

References 12 publications

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“…In this paper, the twodimensional transient global models of G6 and G7 DS furnaces considering thermal convection, thermal radiation, melt and argon ow, phase transition, and impurities coupled transport were established. The differences between the G6 and G7 DS furnaces and the veri cations of the models can refer to in our published papers [10,12,21,23,24]. As shown in Fig.…”

Section: Geometry and Heat Transfer Modelmentioning

confidence: 99%

“…Wu et al [20] compared the thermal eld of G5 and G6 DS furnaces; the results showed that the crystal growth e ciency in the G6 furnace increased by 53.8%, and the average yield rate of the silicon ingots increased by 9%. Su et al [21] showed that the melt ow is relatively stronger as the furnace upgrades, and the temperature and gradient thermal stress in silicon ingot all increase. Nguyen et al [22] investigated the evolution of the thermal eld and ow eld during the crystal growth of GT-DSS G6 and G8 furnaces, and found differences in the structure of the melt ow.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Zhang

et al. 2023

Silicon

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Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidi cation of silicon ingots. The performance of solar cells depends directly on the quality of the wafer and impurities distributions in silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidi cation furnaces are studied. The transient global simulation method is used to calculate the coupled thermal and ow elds in the furnaces, considering the convection of gas and melt, chemical reactions, and segregations of the impurities at the crystal-melt interface. The simulation results show that the distributions of oxygen and carbon impurities change signi cantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.

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Section: Geometry and Heat Transfer Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Zhang

et al. 2023

Silicon

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“…The structured/unstructured hybrid grids are used to divide the computing region. Other detailed descriptions of the furnace modeling and the governing equations of heat transfer and fluid flow are included in our previous published work [23,24]. Figure 2 shows the AGDS used in our study, which is composed of an inner tube and outer tube.…”

Section: Model Description 21 Geometry and Heat Transfer Modelmentioning

confidence: 99%

Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Zhang

et al. 2022

Crystals

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To reduce oxygen and carbon impurities while casting silicon, an argon gas diversion system is proposed. A series of two-dimensional global transient numerical simulations are carried out using Fluent software according to the orthogonal experimental design, including heat transfer, convection of silicon melt and argon gas, and the fully coupling transport of impurities. The numerical results show that when the distance between the outer tube outlet and the cover is 10 mm, the backflow is inhibited by lateral outflow, thus the generation of CO is suppressed and the penetration of impurities into the silicon melt is decreased. The larger the flow rate, the more obvious the effect is. When the outer tube outlet is far from the cover, the effect of removing impurities is no longer significant. In addition, too large or too small an inner tube flow rate is not conducive to impurity reduction. The optimal parameter combination of outer tube flow rate, inner tube flow rate, and the distance between outer tube outlet and the cover are determined by the orthogonal experiment. Compared with the original furnace, the average concentration of oxygen and carbon in casting silicon ingots could be decreased by 7.4% and 59.9%, respectively, by using the optimized argon gas diversion system.

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“…The detailed description of heat and mass transfer models and the governing equations of heat transfer, ow, and melt convection used in the model, the boundary conditions and detailed transport equations of transportation of O and C impurities, material property parameters, and its simpli cations can be found in our previous studies [34][35][36] .…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Guan

et al. 2022

Silicon

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The temperature eld distribution during the growth of crystalline silicon by the directional solidi cation (DS) method is an important factor affecting the growth rate, the shape of the melt-crystal (m-c) interface, and thermal stress. To solve the problem of m-c interface convexity at the early stage of crystal growth caused by supercooling at the bottom center of silicon ingot during DS. In this paper, a two-dimensional global transient numerical model based on a large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally veri ed. Based on the model, the in uence of different bottom thermal gate moving process curves on the convexity of the m-c interface at the early stage was studied, with emphasis on the changes in temperature eld, m-c interface, and thermal stress at the early stage of crystal growth. We have designed three cases, case 1 uses the original moving process curve of bottom thermal gate, case 2 and case 3 adjust the process curve to 0.95 and 0.9 of the original ratio, respectively.The numerical results show that the center cooling condition of silicon ingot and the convexity of the m-c interface are improved with the decreasing of thermal gate moving rate. Compared with case 1, the convexity of case 2 and case 3 is reduced by 55% and 44% on average, respectively.

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Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process

Cited by 8 publications

References 12 publications

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

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