NVM based on FinFET device structures

Applications of Nanotechnology in Next-Generation Nonvolatile Memories

“…Various multigate memories have been fabricated in recent years, these include the Double-Gate Fin SONOS, body-tied DG SONOS (omega) type NVM, and various surround gate NVMs [41][42][43][44][45][46][47][48][49][50]. The channel in these type of NVMs are usually narrow Si Fins or Si/poly-Si nanowires, though sometimes ZnO nanowires have also been reported as channel material [41] (Fig.…”

“…However, the size of the nanocrystals remains a hindrance in further scaling of these devices. With the introduction of multigate architectures in MOS NVM cells and the advent of tunnel FET memory devices, the reign of MOS memory could be extended by a few more years [41][42][43][44][45][46][47][48][49][50][51][52][53].…”

Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices with a Separated Double-Gate Saddle-Type Structure

“…When the thickness of the tunnel oxide becomes thicker than 6-8 nm, the leakage current is below 10 −24 A/cell. 7 The electrostatic integrity of the fin field-effecttransistors (FinFETs) with a multiple-gate transistor * Author to whom correspondence should be addressed. structure is superior to that of the conventional planar metal-oxide-semiconductor field-effect-transistors (MOSFETs), resulting in excellent candidates for scaling flash memory devices down to a sub-50 nm gate length.…”

Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode

“…1 Some literature has reported the fact that memory cells can achieve excellent short channel effect controllability, high driving current, low leakage current, better programming characteristics, and a larger number of NCs in one cell. [8][9][10][11][12] In addition, erase characteristics can be enhanced using high work function gate electrode and high-k dielectric as a blocking oxide layer to suppress the unwanted backward injection effect. 12 In this work, n-channel trigate NVM using TiN metal NCs as the trapping storage, a Al 2 O 3 high-k blocking dielectric layer, and a p + poly-Si gate electrode is shown to successfully exhibit a large memory window as well as good retention and endurance performance.…”

“…1 Therefore, for further scaling, NAND flash technology is predicted to migrate to charge-trapping devices with discrete trap storage, such as silicon-oxide-nitride-oxide-silicon ͑SONOS͒ and nanocrystal ͑NC͒ structures. [2][3][4][5][6][7][8][9][10][11][12][13][14] For SONOS memories, one of the major drawbacks is the erase saturation. NC memories, which use various materials as the storage node, have become one of the possible solutions for future NVM applications.…”