2013
DOI: 10.1002/ppap.201300107
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O2 /HMDSO-Plasma-Deposited Organic-Inorganic Hybrid Film for Gate Dielectric of MgZnO Thin-Film Transistor

Abstract: An organic–inorganic hybrid film is deposited from O2/HMDSO plasma. The SiOSi/SiCH3 FTIR absorption ratio of this film increases with the process power and O2/HMDSO precursor flow ratio, resulting in a more inorganic‐like film. This hybrid film is used as the gate dielectric of MgZnO TFTs. As the SiOSi/SiCH3 FTIR absorption ratio of the gate dielectric increases, the gate leakage current decreases, on/off current ratio increases, threshold voltage increases, and subthreshold swing increases. High SiCH3 … Show more

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Cited by 20 publications
(10 citation statements)
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“…The opening of double and triple bonds and the addition of free radicals to the unsaturated bonds offer more polymer formation pathways than simple recombination of two activated alkane fragments. Therefore, a proper choice of the precursor in combination with a clever selection of deposition parameters could lead to the controllable incorporation of required chemical groups, such as −COOH, −OH, −NH 2 , −SH, and −Br, among others, and to the synthesis of functionalized PPFs with specific properties for application in various domains, including microelectronics, 149 membranes and barriers, 150−152 chemical sensors, 153 and biomedicine. 17,154 It should also be mentioned that a gas mixture of two precursors can generate a copolymer-like PPF with a structure resembling that of one or the other monomer depending on their concentration ratio.…”
Section: < < Alkanes Alkenes Alkynesmentioning
confidence: 99%
See 1 more Smart Citation
“…The opening of double and triple bonds and the addition of free radicals to the unsaturated bonds offer more polymer formation pathways than simple recombination of two activated alkane fragments. Therefore, a proper choice of the precursor in combination with a clever selection of deposition parameters could lead to the controllable incorporation of required chemical groups, such as −COOH, −OH, −NH 2 , −SH, and −Br, among others, and to the synthesis of functionalized PPFs with specific properties for application in various domains, including microelectronics, 149 membranes and barriers, 150−152 chemical sensors, 153 and biomedicine. 17,154 It should also be mentioned that a gas mixture of two precursors can generate a copolymer-like PPF with a structure resembling that of one or the other monomer depending on their concentration ratio.…”
Section: < < Alkanes Alkenes Alkynesmentioning
confidence: 99%
“…At the same time, cyclic, alicyclic, and aromatic precursors are characterized by higher polymerizabilities, and hence deposition rated, than aliphatic precursors because of the possibility of introduce the whole initial structures through plasma-induced grafting. , Among aliphatic precursors the following tendency in polymerization as a function of the degree of saturation has been observed The opening of double and triple bonds and the addition of free radicals to the unsaturated bonds offer more polymer formation pathways than simple recombination of two activated alkane fragments. Therefore, a proper choice of the precursor in combination with a clever selection of deposition parameters could lead to the controllable incorporation of required chemical groups, such as −COOH, −OH, −NH 2 , −SH, and −Br, among others, and to the synthesis of functionalized PPFs with specific properties for application in various domains, including microelectronics, membranes and barriers, chemical sensors, and biomedicine. , …”
Section: Plasma Polymerization: a Particular Type Of Thin-film Plasma...mentioning
confidence: 99%
“…Plasma Enhanced Chemical Vapor Deposition, PECVD, has emerged as a clean, simple and cost-effective methodology for the production of silicon-based coatings. Many studies, employing plasma deposition and hexamethyldisiloxane, HMDSO, as the starting material, have demonstrated the convenience of this method to prepare nanocomposites for the controlled release of silver [1], ice repellent coatings [2], humidity sensors [3], gas permeation barriers [4], dielectric films for gates in MgZnO transistors [5], corrosion resistant layers for Al 2024 and magnesium [6][7] as well as protective gradient coatings [8]. Thus, a broad range of structures have been prepared using the PECVD of HMDSO.…”
Section: Introductionmentioning
confidence: 99%
“…Organosilicon‐oxygen mixtures are widely used for thin film deposition and they are of particular interest in gas sensor applications and in applications as barrier films for food, corrosion protection layer, pharmaceutical packaging for biocompatible materials, dielectric layers, microelectronics, and optics . Among the different organosilicon precursors available, tetraethoxysilane (TEOS), tetramethoxysilane (TMOS) tetramethyldisiloxane (TMDSO), hexamethyldisilazane (HMDS) and hexamethyldisiloxane (HMDSO) have been extensively studied .…”
Section: Introductionmentioning
confidence: 99%