2010
DOI: 10.1051/epjap/2010088
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Object size effect on the contact potential difference measured by scanning Kelvin probe method

Abstract: and macroscopic Kelvin probe are close within the error of about 10-30% for large studied objects, whereas scanning Kelvin probe microscope signal decreases, when the object size becomes smaller than 1.4 µm. CPD and electric field signals measured using many-pass technique allowed us to estimate the influence of electrostatic field disturbance, especially, in the case of small objects.

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Cited by 3 publications
(4 citation statements)
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“…The oscillating potential difference between the tip and surface results in an oscillating electrostatic force of the form where K ( z ) and V ( z ) are the tip‐surface capacitive coupling and potential, respectively. The capacitive coupling K ( z ) has been shown to depend on tip, cantilever, and surface geometry, as well as average tip‐surface distance z 31–41. Note that K ( z ) determines the form of the point spread function with which V ( z ) is convolved to produce an SKPM image 32, 37, 40, 42–44.…”
Section: Origins Of Topography‐induced Artifacts In Skpmmentioning
confidence: 99%
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“…The oscillating potential difference between the tip and surface results in an oscillating electrostatic force of the form where K ( z ) and V ( z ) are the tip‐surface capacitive coupling and potential, respectively. The capacitive coupling K ( z ) has been shown to depend on tip, cantilever, and surface geometry, as well as average tip‐surface distance z 31–41. Note that K ( z ) determines the form of the point spread function with which V ( z ) is convolved to produce an SKPM image 32, 37, 40, 42–44.…”
Section: Origins Of Topography‐induced Artifacts In Skpmmentioning
confidence: 99%
“…The capacitive coupling K ( z ) has been shown to depend on tip, cantilever, and surface geometry, as well as average tip‐surface distance z 31–41. Note that K ( z ) determines the form of the point spread function with which V ( z ) is convolved to produce an SKPM image 32, 37, 40, 42–44. While deconvolution processes are required for truly quantitative measurement of surface potential, we neglect this consideration at present to focus on applicability of 3DKPM to high‐topography surfaces.…”
Section: Origins Of Topography‐induced Artifacts In Skpmmentioning
confidence: 99%
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“… a SKP, scanning Kelvin probe; SKPFM, scanning Kelvin probe force microscopy. Information compiled from refs and . More details of the advantages and disadvantages of different AFM modes can be found in refs and .…”
mentioning
confidence: 99%