Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

doi:10.1016/j.jlumin.2011.02.016

Cited by 10 publications

(2 citation statements)

References 28 publications

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“…Factors governing the shape of nanostructured thin films include zigzags, vertical posts, helices, chiral pillars, and their optical properties, which are interesting due to birefractance [14][15][16][17][18][19][20][21][22][23]. Therefore, by extending the results of previous efforts, this study investigates the zigzag and helical AlN nanorod structures that are prepared by GLAD [24]. GaNbased LED structures are grown on a sapphire substrate with zigzag and helical AlN nanorod structures.…”

Section: Introductionmentioning

confidence: 99%

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN‐Based Light‐Emitting Diode

Chen

Tien

Liu

et al. 2012

Journal of Nanomaterials

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This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

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Section: Introductionmentioning

confidence: 99%

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN‐Based Light‐Emitting Diode

Chen

Tien

Liu

et al. 2012

Journal of Nanomaterials

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“…8 OAD also offers flexible design of substrates for growth of semiconductors, e.g., GaN. 9 Furthermore, porous silicon monoxide (SiO) structures obtained through OAD have been applied as humidity sensors. 10 While the linear optical properties of OAD films have been studied extensively, only a few examples of nonlinear optical investigations of such films can be found in the literature, focusing on the use of optical second-harmonic generation (SHG) to characterize thin films of Al 2 O 3 , 11 AlN, 12 and ZnO.…”

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confidence: 99%

Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

Andersen

Trolle

Pedersen

2013

Applied Physics Letters

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Ultra‐Inclined Nanocolumnar ZnO Films Sputtered Using a Novel Masking Configuration Providing Controlled and Restricted Oblique Angle Deposition for Enhanced Sensing Platforms

Pelayo Garcia,

Gibson,

McAughey

et al. 2024

Advanced Physics Research

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Oblique angle deposition (OAD) of inclined thin films is mainly performed using electron beam evaporation due to its accurate point source control over the incoming evaporated flux angle α, leading to thin films with a nanocolumnar inclination angle β. However, the utilization of magnetron sputtering (MS) with an extended source for OAD is not extensively studied and reported. This work presents a thorough analysis of ZnO inclined thin films deposited by a novel restricted DC‐reactive MS‐OAD technique. OAD‐inclined films are deposited at α ranged 60°‐88°, where incoming flux is restricted using a patented masking configuration enabling tunable control of deposited nanocolumn angular range. The described technique provides accurate control over the resulting β (99.5% reproducibility), allowing demonstrated βmax of 47.3°, close to theoretical limits predicted for ZnO. The approach discussed here probes enhanced control of β comparable to that observed in evaporation, however using an extended source, resulting in high‐quality reproducible nanocolumnar‐inclined films. The mentioned improvements result from the exploration of operational parameters such as magnetron power, working pressure, and chamber temperature, as well as the design of the restricting configuration and substrate holders and their influence on the resulting inclined thin film crystallinity, and morphology.

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Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

Cited by 10 publications

References 28 publications

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN‐Based Light‐Emitting Diode

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN‐Based Light‐Emitting Diode

Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

Ultra‐Inclined Nanocolumnar ZnO Films Sputtered Using a Novel Masking Configuration Providing Controlled and Restricted Oblique Angle Deposition for Enhanced Sensing Platforms

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