Observation and an explanation of breakdown of the quantum Hall effect

Cage, Marvin E.; Yu, Dingyi; Reedtz, G.M.

doi:10.6028/jres.095.009

Cited by 12 publications

(19 citation statements)

References 12 publications

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“…GaAs (8), has a zero magnetic field mobility of 100 000 cm^/(V-s) at 4.2 K, and exhibits excellent integral quantum Hall effect properties. This sample and the AT&T GaAs(7) sample used in the previous breakdown experiments [3,[5][6][7][8] have been used as the United States resistance standard.…”

Section: Samplementioning

confidence: 99%

“…Cage et al [8] and Hein et al [9] have shown that the Vx signal can sometimes be time-averages of two or more discrete dc voltage levels in which only one level is occupied at a time, but where switching occurs between the levels. Therefore, histograms were made to ensure that the signals in n -H ,A ,A [10] , A" …”

Section: Histogramsmentioning

confidence: 99%

“…This sample and the AT&T GaAs(7) sample used in the previous breakdown experiments [3,[5][6][7][8] have been used as the United States resistance standard. The inset of Fig.…”

Section: Samplementioning

confidence: 99%

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Spectroscopic study of quantized breakdown voltage states of the quantum Hall effect

Lavine¹,

Cage²,

Elmquist³

1994

J. RES. NATL. INST. STAN.

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Quantized breakdown voltage states are observed in a second, wide, highquality GaAs/AlGaAs sample made from another wafer, demonstrating that quantization of the longitudinal voltage drop along the sample is a general feature of the quantum Hall effect in the breakdown regime. The voltage states are interpreted in a simple energy conservation model as occurring when electrons are excited to higher Landau levels and then return to the original level. A spectroscopic study of these dissipative voltage states reveals how well they are quantized. The statistical variations of the quantized voltages increase linearly with quantum number.

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Section: Samplementioning

confidence: 99%

Section: Histogramsmentioning

confidence: 99%

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Spectroscopic study of quantized breakdown voltage states of the quantum Hall effect

Lavine¹,

Cage²,

Elmquist³

1994

J. RES. NATL. INST. STAN.

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“…The predictions of the RK model were also verified experimentally [20,21]. Other circuit models were developed in later years [21][22][23][24][25][26][27][28] and a general method of analysis based on the indefinite admittance matrix has been recently proposed [29].…”

Section: Introductionmentioning

confidence: 85%

“…Nonetheless, a circuit model can be a useful basis for taking into account nonidealities (e.g. nonzero longitudinal resistances [24,27], parasitic elements in AC regime [41]) or to develop a SPICE macro-model, as we shall see in the next section.…”

Section: Brief Review Of Qhe Circuit Modelsmentioning

confidence: 99%

Circuit models and SPICE macro-models for quantum Hall effect devices

Ortolano

Callegaro

2015

Meas. Sci. Technol.

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Abstract. Quantum Hall effect (QHE) devices are a pillar of modern quantum electrical metrology. Electrical networks including one or more QHE elements can be used as quantum resistance and impedance standards. The analysis of these networks allows metrologists to evaluate the effect of the inevitable parasitic parameters on their performance as standards. This paper presents a systematic analysis of the various circuit models for QHE elements proposed in the literature, and the development of a new model. This last model is particularly suited to be employed with the analogue electronic circuit simulator SPICE. The SPICE macro-model and examples of SPICE simulations, validated by comparison with the corresponding analytical solution and/or experimental data, are provided.Circuit models and SPICE macro-models for quantum Hall effect devices 2

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Determination of the von Klitzing constant and the fine-structure constant through a comparison of the quantized Hall resistance and the ohm derived from the NIST calculable capacitor

Jeffery¹,

Elmquist²,

Shields³

et al. 1998

Metrologia

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This paper describes a recent determination of the von Klitzing constant and the fine-structure constant by comparisons of values of the ohm as defined in the International System of Units (SI), derived from the National Institute of Standards and Technology (NIST) calculable cross-capacitor, and values of the international practical unit of resistance derived from the integral quantum Hall effect. In this determination, the comparisons were made in a series of measurements lasting three years. A small difference is observed between this determination and an earlier comparison carried out in this laboratory and reported in 1988. The most recent value of the fine-structure constant based on the experimental value and theoretical expression for the magnetic moment anomaly of the electron, which has the smallest uncertainty of any value currently available, is consistent with both of these results. The new value exceeds the 1990 conventional value of the von Klitzing constant by slightly more than twice the relative standard uncertainty of the present measurement, which is 2.4 10 -8 .

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Observation and an explanation of breakdown of the quantum Hall effect

Cited by 12 publications

References 12 publications

Spectroscopic study of quantized breakdown voltage states of the quantum Hall effect

Spectroscopic study of quantized breakdown voltage states of the quantum Hall effect

Circuit models and SPICE macro-models for quantum Hall effect devices

Determination of the von Klitzing constant and the fine-structure constant through a comparison of the quantized Hall resistance and the ohm derived from the NIST calculable capacitor

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