Observation of Al/Si3N4 interface

Naka, Masaaki; Mori, Hirotarô; Kubo, Masao; Okamoto, Ikuo; Fujita, Hisanori

doi:10.1007/bf01730214

Cited by 20 publications

(5 citation statements)

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“…[29][30][31] The thin AlN acts as a diffusion barrier to retard further reaction. Structurally, the nitrogen-rich M-Si-N films appear to be a combination of M nitrides and silicon nitride, albeit with no long-range order, based on extended-energy-loss-finestructure ͑EXELFS͒ measurements.…”

Section: Discussionmentioning

confidence: 99%

“…27,28 In those studies, Ta-Si-N reportedly did not react with Al, according to x-ray diffraction and conventional transmission electron microscopy ͑TEM͒ analyses. Curiously, tantalum silicides, 27 tantalum nitrides, 8 and silicon nitride [29][30][31] are all known to react with Al. In this article we show that W-Si-N and Mo-Si-N are also effective barriers.…”

Section: Introductionmentioning

confidence: 99%

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Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Reid

Kolawa

Garland

et al. 1996

Journal of Applied Physics

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M-Si-N and M-Si ͑MϭMo, Ta, or W͒ thin films, reactively sputtered from M 5 Si 3 and WSi 2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4 He ϩϩ backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M-Si-N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M-Si-N films during a 700°C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M-Si-N/Al interface, as seen by transmission electron microscopy.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Reid

Kolawa

Garland

et al. 1996

Journal of Applied Physics

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“…The adherence of Al 2 O 3 on Si 3 N 4 surface, identified in some works [24,25] also hinders the observation of the interface, due to its high resistance to chemical etching used for observation [24,26]. Another problem found has been the difficulty of sample preparation for TEM observations [27].…”

Section: Corrosion Testsmentioning

confidence: 98%

Highly dense Si3N4 crucibles used for Al casting: An investigation of the aluminum–ceramic interface at high temperatures

Santos

Ribeiro

Strecker

et al. 2007

Journal of Materials Processing Technology

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“…It may be expected that the formation of Ti silicides should promote wetting because of their metallic nature, but literature data indicate that at least TiB2 is not wettable by Cu [5] and this could account for the poor wettability of BN relative to Si 3 N4 • Al can also be used as a braze for nitride ceramics [33] and several careful studies of the interfacial reaction products have been made for Si 3 N 4 . Unlike the reactions with Ti containing brazes, the product layers are very thin and Japanese workers have had to use TEM techniques to resolve them as Si-Al-O-N and ~N compounds [34,35].…”

Section: Wetting By Chemically Active Alloysmentioning

confidence: 99%

Ceramic-Metal Interfaces

Nicholas

1989

Surfaces and Interfaces of Ceramic Materials

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ABSTRACT. High integrity ceramic-metal interfaces are required for several areas of advancing technology but are difficult to produce because of the markedly differing lattice bonding characteristics of ceramics and metals. If the required properties are to be achieved, the chemistries of interfaces must be changed and this paper considers to what extent simple chemical concepts can account for the behaviour of brazed and diffusion bonded ceramic-metal systems. Particular attention is paid to the role of Ti promoting the wetting of ceramics through the formation of metal rich, hypostoichrometric, reaction product and to the beneficial effects of incorporating such metals as Sn and In in Ti containing brazes. The need to control the extent as well as the nature of the reactions if strong bonds are to be produced is high lighted, and comparisons are made between the fabrication processes and properties of brazed and diffusion bonded interfaces. INTRODUCTIONA wide range of ceramic-metal interfaces occur naturally and are applied in technology. Thus the surface of almost every metal is covered by an oxide film, and the properties of the oxide-metal interfaces can exert a dominant influence on film characeristics. Further the interfaces formed by carbide precipitates with their matrices control important properties of steels and other metal alloys. This presentation, however, is concerned with the synthetic interfaces created in response to demands for ceramic-metal components and composite materials. In particular, attention is devoted to the interfaces formed with ceramics by liquid metals during brazing and by solid metals during diffusion bonding.Compared to metals, ceramics are usually refractory and brittle electrical and thermal insulators that have low thermal expansivities, and these differences reflect the bonding characteristics of their lattices. While the bonding electrons in metals are delocalised, the movement of electrons in ceramics is restricted by the ionicity or covalency of their lattices. Thus the nature of the lattice bonding 393

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Observation of Al/Si3N4 interface

Cited by 20 publications

References 1 publication

Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

Highly dense Si3N4 crucibles used for Al casting: An investigation of the aluminum–ceramic interface at high temperatures

Ceramic-Metal Interfaces

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