Observation of Al surface during sputter-cleaning and annealing procedures under UHV-REM

Akita, Tomoki; Nagata, Takumi; Kimura, Yoshihide; Takai, Yoshizo; Shimizu, Ryuichi

doi:10.1093/oxfordjournals.jmicro.a023584

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2018

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“…walls of fusion devices) and in device technology for optimizing semiconductor doping profiles and tailoring thin film growth [1][2][3][4][5]. In surface analysis, erosion of solid surfaces by collisional ion beam sputtering is performed to clean samples using chemically inert noble gases (NG) in ultra-high vacuum (UHV) environment [6,7].…”

Section: Introductionmentioning

confidence: 99%

Depth profiling of noble gas atoms implanted in Al matrix: A photoelectron energy loss spectroscopy study

2018

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Highlights • Non-destructive XPS method provides depth and width of implanted atom profiles • Measurement of plasmon peak intensities vs photoelectron emission angle • Analytical model for Gaussian, triangular and rectangular depth distributions • Model assumes that energy losses are dominated by extrinsic plasmon excitation • Application to the Ar↓Al system and comparison with Monte Carlo simulations

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Section: Introductionmentioning

confidence: 99%