2017
DOI: 10.1063/1.4994268
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Observation of anisotropy in thermoelectric properties of individual single-crystalline bismuth nanowires

Abstract: Fully radiative relaxation of silicon nanocrystals in colloidal ensemble revealed by advanced treatment of decay kinetics Journal of Applied Physics 122, 034304 (2017); 10.1063/1.4993584 Facile design and stabilization of a novel one-dimensional silicon-based photonic crystal microcavity Journal of Applied Physics 122, 033104 (2017); 10.1063/1.4994031 Simplified parameter extraction method for single and back-to-back Schottky diodes fabricated on silicon-oninsulator substrates

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Cited by 12 publications
(8 citation statements)
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“…For example, single-crystalline Bi nanowires were successfully fabricated by spontaneous growing on films based on thermal expansion mismatch of Bi film and the substrate via an OFF-ON method because of the thermally induced stress during annealing. [37] The TEM image of one single Bi nanowire reveals the successful fabrication (Figure 3a), confirmed by the HRTEM result with a characteristic lattice fringe distance indexed to (102) plane of Bi crystal (Figure 3b). [19,93] A selected area electron diffraction (SAED) pattern captured from a sample sliced normal to the growth direction, exhibits that the asfabricated Bi nanowires grow along the [110] direction ( Figure 3c).…”
Section: D Bi Nanowiresmentioning
confidence: 59%
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“…For example, single-crystalline Bi nanowires were successfully fabricated by spontaneous growing on films based on thermal expansion mismatch of Bi film and the substrate via an OFF-ON method because of the thermally induced stress during annealing. [37] The TEM image of one single Bi nanowire reveals the successful fabrication (Figure 3a), confirmed by the HRTEM result with a characteristic lattice fringe distance indexed to (102) plane of Bi crystal (Figure 3b). [19,93] A selected area electron diffraction (SAED) pattern captured from a sample sliced normal to the growth direction, exhibits that the asfabricated Bi nanowires grow along the [110] direction ( Figure 3c).…”
Section: D Bi Nanowiresmentioning
confidence: 59%
“…Many researches have focused on new routes to the controllable synthesis of 1D nanostructures, such as hydrothermal methods, [56,101,102] solvothermal methods, [48,59] vacuum melting and pressure injection methods, [36] stress-induced methods, [40,103,104] radio frequency magnetron sputtering methods, [54] chemical dealloying, [105] closed space sublimation, [53] microwave heating of bulk bismuth. [49] The unique properties of as-synthesized 1D Bi nanomaterials can lead to a variety of applications such as electronics, [106,107] thermoelectrics, [13,37,108,109] optics, [110] sensors, [63,111] and catalysis, [35,43,52] which also encourages active researchers Reproduced with permission. [19] Copyright 2018, American Chemical Society.…”
Section: D Bi Nanoparticlesmentioning
confidence: 99%
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“…Thermoelectric (TE) devices are tools designed using semiconducting materials that can convert heat into electricity. 1 Several materials and structures [2][3][4][5] including nanostructures 6,7 have been investigated as TE materials. However, developing highly efficient TE materials is still a challenge.…”
Section: Introductionmentioning
confidence: 99%
“…Beom [16] studied the transformed function representations of plane solutions for anisotropic elasticity and thermoelasticity; Zhu [17] developed an approximate method to solve anisotropic elliptic problems. These studies highlight the importance of anisotropic analysis, and quite a few theoretical models as well as experimental studies have also been developed to obtain the anisotropic parameters of various materials [18][19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%