Observation of anomalous reentrant superconductivity in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">K</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">BiO<

Kim, D. C.; Kim, J. S.; Kim, Gyu-Tae; Баранов, А. Н.; Park, Y. W.; Pshirkov, J. S.; Антипов, Е.В.

doi:10.1103/physrevb.64.064502

Cited by 9 publications

(4 citation statements)

References 30 publications

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“…temperature [53]. Due to these quantum effects, the current-voltage characteristics become nonlinear and the resistances behave non-monotonic with excitation current [20,[53][54][55][56] (see supplementary figure S4, available at stacks.iop.org/NJP/15/083022/mmedia).…”

Section: Transport Propertiesmentioning

confidence: 99%

“…In contrast to homogeneous superconductors with a sharp transition to a zero-resistance state that persists at all temperatures below the critical one, heterogeneous films can demonstrate a complex, non-monotonic resistance versus temperature curve in the temperature range where Cooper-pair condensation takes place. Phenomena such as incomplete transitions, reentrant (the loss of superconductivity at a temperature lower than the critical one) or quasi-reentrant (presence of a resistance minimum) superconductivity have been observed [18][19][20][21]. It is an open question whether such effects are also present in semiconductor films with superconducting precipitates and how they are related to structural details.…”

Section: Introductionmentioning

confidence: 99%

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Silicon films with gallium-rich nanoinclusions: from superconductor to insulator

et al. 2013

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Si films sputter deposited on thermally oxidized Si are enriched with Ga by ion implantation through a SiO 2 capping layer. The morphology and the electrical transport properties of these films are investigated after rapid thermal annealing. Amorphous, Ga-rich nanoinclusions are embedded in a nanocrystalline Si matrix. The metallic nanoinclusions become superconducting below 7 K. They form a random network of junctions to heavily doped Si crystallites. Small modifications of the junction properties, e.g. by annealing or current pulses, can dramatically change the electronic transport in the film. Ga-rich Si films show a wealth of low-temperature transport phenomena, which have been known until now only from granular metals or high-temperature superconductors: superconductor-insulator transition, quasi-reentrant superconductivity and current-controlled sheet resistance.

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Section: Transport Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon films with gallium-rich nanoinclusions: from superconductor to insulator

et al. 2013

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“…8 The exponent β of the fit curves for the current-voltage characteristics as function of the magnetic field at low temperatures. The statistical number of quasiparticles that participate in the cotunneling events is (β+1)/2 and decreases with increasing temperature and magnetic field barrier E C and Cooper pair tunneling is strongly suppressed [25]. Nevertheless, the grains in the insulating film remain superconducting.…”

Section: Resultsmentioning

confidence: 97%

“…Additional exotic effects occur if the grains are superconducting and form a random array of Josephson junctions in the normal-state matrix [23]. Then, reentrant or quasi-reentrant superconductivity is possible as e.g., observed in granular Al films [24], oxidic superconductors [25] or superconducting semiconductors [26]. However, the most astonishing observation is that films with superconducting grains can become superconducting or insulating in dependence on the normal-state sheet resistance.…”

Section: Introductionmentioning

confidence: 99%

Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling

et al. 2015

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The electronic transport properties of insulating Si:Ga films with superconducting, Ga-rich nanoprecipitates are investigated in dependence on temperature, current, and magnetic field. The large negative magnetoresistance, observed below the critical temperature can be explained by Cooper pair breaking and subsequent tunneling of the fermionic quasiparticles. Localization due to quantum interferences of bosons or fermions, as recently discussed, seems not to be the reason for the insulating state and the large magnetoresistance. Cooper pair tunneling is blocked by the high Coulomb barrier. The quasiparticles can overcome the barrier by inelastic cotunneling that results in nonlinear current-voltage characteristics and negative electroresistance. Since the experimental results obtained for the Si:Ga film resemble that of many other films with superconducting nanoprecipitates the conclusions drawn here could be quite general.

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Reentrant Phenomena in Relaxors

Bokov

2016

Nanoscale Ferroelectrics and Multiferroics

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Observation of anomalous reentrant superconductivity inSr1−xKxBiO<

Cited by 9 publications

References 30 publications

Silicon films with gallium-rich nanoinclusions: from superconductor to insulator

Silicon films with gallium-rich nanoinclusions: from superconductor to insulator

Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling

Reentrant Phenomena in Relaxors

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