Experimentally observed, stable trions with large binding energy (≈25 meV) in atomically thin monolayer 2D transition metal dichalcogenides MX 2 (M = Mo, W, X = S, Se, and Te) with an isotropic crystal structure have been extensively studied. In contrast, the characteristics of trions in atomically thin 2D materials with an anisotropic crystal structure are not completely understood. Low-temperature photoluminescence (PL) spectroscopy in few-layer ReS 2 with an anisotropic crystal structure by applying a gate voltage is described. A new PL peak that emerges below the lower-energy side of neutral excitons obtained by tuning the gate voltages is attributed to emission from negative trions. Furthermore, the trion binding energy that is strongly dependent on the layer thickness reaches a large value of ≈60 meV in 1L-ReS 2 , which is ≈2 times larger than that in other isotropic 2D materials (MX 2 ). The enhancement of the binding energy reflects the quasi-1D nature of the trions in anisotropic atomically thin ReS 2 . These experimental observations will promote a better understanding of the optical response and applications in new categories of the anisotropic atomically thin 2D materials with a quasi-1D nature.crystal structures, such as GeX (X = S, Se), [13][14][15][16] SnX (X = S, Se), [14,15,[17][18][19][20][21] have been extensively studied as a new research direction for 2D materials. Such atomically thin 2D materials exhibit the anisotropic carrier transport and optical properties owing to the anisotropic electronic structures, which provide the novel characteristics of linear dichroism, [11,22] valley selective excitation by linearly polarized light, [23] and polarization-sensitive photodetectors from the viewpoints of optical physics [24,25] and device applications. [26][27][28] Contrary to the isotropic structure MX 2 , ReS 2 is a layered material with a reduced symmetry because of the weak interlayer coupling from the distorted 1T structure, [29] which imparts highly anisotropic optical absorption and photoluminescence (PL). [30][31][32] A field-effect transistor (FET) with highly anisotropic carrier transport and polarization-sensitive photodetectors is also demonstrated in ReS 2 . [33][34][35][36][37] More-