1998
DOI: 10.1063/1.122098
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Observation of confinement-dependent exciton binding energy of GaN quantum dots

Abstract: The photoluminescence emission peak energy of GaN quantum dots was observed to shift to higher energy with decreasing quantum dot size. This effect was found to be a combination of a blueshift from the confinement-induced shift of the electronic levels and a redshift from the increased Coulomb energy induced by a compression of the exciton Bohr radius. From this observation, absolute values of the exciton binding energy as a function of quantum dot size are determined.

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Cited by 132 publications
(96 citation statements)
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“…Eventhough the physics of one and two dimensional systems have drawn the attention of theoreticians for a long time, only since the late seventies these systems could be realized, with the development of semiconductor growth techniques like the Molecular Beam Epitaxy (MBE) and Metal Oxide Chemical Vapour Deposition (MOCVD). The quantum size effects in low dimensions have been extensively investigated both experimentally [1] and theoretically [2]. The impurity plays a fundamental role in some physical properties such as optical and transport phenomena at low temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Eventhough the physics of one and two dimensional systems have drawn the attention of theoreticians for a long time, only since the late seventies these systems could be realized, with the development of semiconductor growth techniques like the Molecular Beam Epitaxy (MBE) and Metal Oxide Chemical Vapour Deposition (MOCVD). The quantum size effects in low dimensions have been extensively investigated both experimentally [1] and theoretically [2]. The impurity plays a fundamental role in some physical properties such as optical and transport phenomena at low temperature.…”
Section: Introductionmentioning
confidence: 99%
“…20,21 We have assumed that the field due to doped regions is negligible. This is because at room temperature only about 1% of acceptors are ionized, due to the strong binding energy between the Mg dopant and GaN.…”
Section: Electronic Structurementioning
confidence: 99%
“…(i) The band gap expands with reducing particle size, which gives rise to the blueshift in the PL and photo-absorbance (PA) spectra of nanometric semiconductors such as Si oxides [73,478,479,480], IIIeV [481] (GaN [482,483], InAs [484], GaP, and InP [485,486]) and IIeVI (CdS [487e489], ZnS [490], CdSe [491,492], ZnTe [493], CdTe/CdZnTe [494]) compounds. (ii) The energies of PL and PA involve the contribution from electronephonon coupling that shifts the optical band gap E G from the true E G by the well-known value of Stokes shift arising from electronephonon interaction that also changes with solid size [47].…”
Section: Introductionmentioning
confidence: 99%