Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

Janssen, G.; Goovaerts, E.; Bouwen, A.; Partoens, B.; Daele, B. Van; Žurauskienė, N.; Koenraad, PM Paul

doi:10.1103/physrevb.68.045329

Cited by 12 publications

(12 citation statements)

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“…In this paper, properties of high density InAs/GaAs quantum dots with high photoluminescence (PL) peak energy (1.25 eV) indicating small QD dimensions are studied by optically detected microwave resonance (ODMR) and time resolved (TR) photoluminescence techniques. The obtained results are compared with the results obtained on shallowly formed InAs/GaAs QD structures showing close PL peak energy (1.31 eV) [3,4].…”

Section: Introductionmentioning

confidence: 72%

“…A strong negative signal at low magnetic field was ascribed to cyclotron resonance of the electron in the two-dimensional WL, corresponding to an effective mass of 0.053m 0 . A microwave-induced positive signal at high field was tentatively attributed to magnetic resonance transitions between spin states of the holes confined in shallow dots [4]. No ODMR signal was observed from the well-defined QDs in sample A.…”

Section: Resultsmentioning

confidence: 96%

“…• C at a growth rate of 0.285 ML/s) [4,6]. It should be noted that due to relatively high growth temperature of the GaAs capping layer in this sample, the InAs material is partially diffused into the capping layer and therefore a wetting layer (WL) is formed with shallowly formed QDs instead of well-defined dots.…”

Section: Sample Specifications and Experimental Setupmentioning

confidence: 99%

“…The microwave-induced changes in the total PL intensity were synchronously detected with the 3 kHz on/off modulation of the applied microwaves at 1.9 K (for a detailed description of the setup see Ref. [4]). …”

Section: Sample Specifications and Experimental Setupmentioning

confidence: 99%

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Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots

et al. 2005

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Zurauskiene, N.; Marcinkevicius, S.; Jansen, G.T.; Goovaerts, E.; Nötzel, R.; Koenraad, P.M.; Wolter, J.H. Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Zurauskiene, N., Marcinkevicius, S., Jansen, G. T., Goovaerts, E., Nötzel, R., Koenraad, P. M., & Wolter, J. H. (2005). Optically detected microwave resonance and carrier dynamics in InAs/GaAs quantum dots. Acta Physica Polonica A, 107(2), 435-439. General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots. The data are compared with those recently obtained on shallowly formed InAs quantum dot structures.

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Section: Introductionmentioning

confidence: 72%

Section: Resultsmentioning

confidence: 96%

Section: Sample Specifications and Experimental Setupmentioning

confidence: 99%

Section: Sample Specifications and Experimental Setupmentioning

confidence: 99%

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Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots

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“…The ODMR technique is a highly sensitive method used to investigate the fine electronic structure of low-dimensional systems [11,12]. The first investigations of optically detected cyclotron and magnetic resonance transitions in epitaxially grown InAs/GaAs QDs were reported in [13][14][15]. In this work, the ODMR results demonstrating strong anisotropy of the spectra are presented and discussed considering the influence of electron confinement on the ODMR spectra.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of small-size semiconductor quantum dots

Žurauskienė¹

2004

Lith. J. Phys.

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The results of photoexcited carrier dynamics and optically detected microwave resonance (ODMR) spectroscopy of smallsize InAs/GaAs quantum dots (QDs) are presented. Very long lifetimes (1-10 ns) of photoexcited carriers were observed in this system by time-resolved photoluminescence measurements. This feature could be exploited to develop high-sensitivity infrared photodetectors based on small-size quantum dots. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission induced by 95 GHz microwave excitation, and the exciton fine structure was studied. The microwave-induced signal at magnetic field of 1.6 T was attributed to magnetic resonance transitions between spin states of holes confined in the dots. The obtained low field (at 0.18 T) signal is ascribed to cyclotron resonance of the electron in a two-dimensional wetting layer, corresponding to an effective electron mass of 0.053m0.

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Broadband Emission Origin in Metal Halide Perovskites: Are Self‐Trapped Excitons or Ions?

Jiang

et al. 2023

Advanced Materials

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It has always been a goal to realize high efficiency and broadband emission in the single‐component materials. The appearance of metal halide perovskites makes it possible. Their soft lattice characteristics and significant electron‐phonon coupling synergistically generate the self‐trapped excitons (STEs), contributing to the broadband emission with a large Stokes shift. Meanwhile, their structural/compositional diversity provides suitable active sites and coordination environments for ns2 ions doping, allowing 3Pn (n = 0, 1, 2)→1S0 transitions toward the broadband emission. The ns2 ions emission is phenomenologically similar to that of the STE emission, preventing people from in‐depth understanding their emission origin, thus failure to meeting the design requirements to serve the various sectors of practical applications. In this scenario, we deploy this review by summarizing the fundamentals and development of such two emission mechanisms, to establish a clear and comprehensive understanding of the broadband emission phenomenon, which may pave the way to an ideal customization of broadband‐emission metal halide perovskites.This article is protected by copyright. All rights reserved

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Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

Cited by 12 publications

References 34 publications

Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots

Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots

Photoluminescence of small-size semiconductor quantum dots

Broadband Emission Origin in Metal Halide Perovskites: Are Self‐Trapped Excitons or Ions?

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