Observation of dynamic annealing effects in oxide single crystals after high-dose18O+implantation at 500 °C

Abstract

Dynamic annealing effects and the behavior of oxygen trapping and migration in the perovskite oxide single crystals following high dose 18 O ϩ implantation at 500°C and at room temperature have been studied. We report that the cascade collision induced by room-temperature irradiation with 18 O ions ͑200 keV 5ϫ10 16 /cm 2 ͒ into SrTiO 3 single crystal induces an essentially amorphous (min Ϸ96%) surface layer to a depth of 400 nm. However, irradiation at 500°C results in dynamic annealing effects since ion channeling shows min of 3% in the near surface region. 18 O depth profiles measured by the 18 O(p,␣) 15 N nuclear reaction show that high-temperature implantation results in a flat-topped 18 O distribution with only 48% ͑compared with room-temperature implantation͒ of implanted 18 O retained, and more importantly, channeled nuclear reaction analysis shows that at least 77% of the retained 18 O occupies substitutional sites. Room-temperature implantation plus post-irradiation annealing at 500°C in flowing oxygen ambient resulted in much less recovery of irradiation damage ͑ min Ϸ33 to 72%͒. Similar effects were observed in 18 O implanted single crystal LaAlO 3. ͓S0163-1829͑98͒03510-3͔

Comprehensive study of the effect of the irradiation temperature on the behavior of cubic zirconia

“…Change in the irradiation temperature may affect the damage creation and recovery rates, as readily demonstrated in strontium titanate (STO), 32 silicon carbide (SiC), 33,34 and some pyrochlores. 35 These materials exhibit very low damage level when irradiated above a threshold temperature whereas they otherwise undergo amorphization.…”