Observation of electric potential in organic thin-film transistor by bias-applied hard X-ray photoemission spectroscopy

Watanabe, Takahito; Tada, Keisuke; Yasuno, Shinji; Oji, Hiroshi; Yoshimoto, Noriyuki; Hirosawa, Ichiro

doi:10.7567/jjap.55.03dd12

Cited by 5 publications

(2 citation statements)

References 34 publications

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“…Thanks to the larger probing depth (>10 nm) achievable with respect to conventional X‐ray photoelectron spectroscopy, HAXPES provides an excellent, nondestructive approach to probe chemical changes and charging effects of interfaces buried inside layered heterostructures, in addition to the bulk electronic structure of the materials . In particular, in operando HAXPES performed on a device electrically biased in situ provides an opportunity to correlate very strictly the resistive switching effects to the electronic structure and the electrical potential of the probed volume …”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Arndt

Borgatti

Offi

et al. 2017

Adv Funct Materials

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Resistive random access memory is a promising, energy-efficient, low-power "storage class memory" technology that has the potential to replace both flash storage and on-chip dynamic memory. While the most widely employed systems exhibit filamentary resistive switching, interface-type switching systems based on a tunable tunnel barrier are of increasing interest. They suffer less from the variability induced by the stochastic filament formation process and the choice of the tunnel barrier thickness offers the possibility to adapt the memory device current to the given circuit requirements. Heterostructures consisting of a yttria-stabilized zirconia (YSZ) tunnel barrier and a praseodymium calcium manganite (PCMO) layer are employed. Instead of spatially localized filaments, the resistive switching process occurs underneath the whole electrode. By employing a combination of electrical measurements, in operando hard X-ray photoelectron spectroscopy and electron energy loss spectroscopy, it is revealed that an exchange of oxygen ions between PCMO and YSZ causes an electrostatic modulation of the effective height of the YSZ tunnel barrier and is thereby the underlying mechanism for resistive switching in these devices.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Arndt

Borgatti

Offi

et al. 2017

Adv Funct Materials

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“…Bias applied hard x-ray photoelectron spectroscopy (HAXPES) has been developed to evaluate the energy distribution of interface states and observe the electric potential in the semiconductor channel during the device operation [4,5]. Here, note that HAXPES can non-destructively probe the electronic states of the bulk and buried interface lying at depths of several tens of nm due to its large probing depth [6,7].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Potential Distribution in Channel Region of Amorphous InGaZnO Thin Film Transistor by Bias Applied Hard X-ray Photoelectron Spectroscopy

Yasuno

Watanabe

Ishimaru

2017

JSA

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The potential distribution image in the channel plane of an amorphous InGaZnO4 (a-IGZO) thin film transistor in the device operation was evaluated by bias applied hard X-ray photoelectron spectroscopy (HAXPES). We observed that the potential in the direction of channel length changed as a function of source-drain and/or gate voltage condition. In particular, in the case of the turn-on voltage condition (saturation regime), a high potential region in the a-IGZO channel was clearly observed. HAXPES under bias voltage was found to be very useful to evaluate the potential in the channel region during transistor operation.

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Development of hard x-ray photoelectron spectroscopy using synchrotron radiation x-ray up to 30 keV

Yasuno,

Seo,

Takagi

et al. 2023

Review of Scientific Instruments

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Hard X-ray photoelectron spectroscopy (HAXPES) is a powerful tool for investigating the chemical and electronic states of bulk and buried interfaces non-destructively due to its large probing depth. To obtain a much larger probing depth and measure deeper regions than conventional HAXPES, we have developed a high-energy HAXPES (HE-HAXPES) system excited by photon energies up to 30 keV. This system is achieved by combining an applied bias voltage on the sample with a conventional hemispherical electron energy analyzer. By utilizing this system, we successfully observed a Si 1s peak from the bulk-Si substrate underneath the 110-nm-thick SiO2 film at a photon energy of 30 keV. Moreover, the system found that the asymmetrical spectral shape of the Si substrate signal originated from the electronic state, which is upward band bending formed at the interface between the SiO2 film and Si substrate. The HE-HAXPES system, excited by photon energy up to 30 keV, could be a very useful tool to yield genuine insights into the chemical and electronic states in deeply buried regions.

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Observation of electric potential in organic thin-film transistor by bias-applied hard X-ray photoemission spectroscopy

Cited by 5 publications

References 34 publications

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Evaluation of Potential Distribution in Channel Region of Amorphous InGaZnO Thin Film Transistor by Bias Applied Hard X-ray Photoelectron Spectroscopy

Development of hard x-ray photoelectron spectroscopy using synchrotron radiation x-ray up to 30 keV

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