Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements

Kuo, Chil-Chyuan

doi:10.1016/j.jmatprotec.2008.07.003

Cited by 19 publications

(11 citation statements)

References 31 publications

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“…However, for this laser fluence, the grain size became smaller compared with that for a laser fluence of 380 mJ/cm 2 . The reduction in grain size is considered to be caused by the poly-Si film being completely melted at a laser fluence of 430 mJ/cm 2 [6]. Therefore, the increase in resistance is considered to be because of the reduction in grain size [7].…”

Section: Resultsmentioning

confidence: 99%

P-25: Super Low Temperature Doping of Phosphorus to Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution

Suwa

Ikenoue

Oizumi³

et al. 2016

SID Symposium Digest of Technical Papers

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In this paper, we report on super low temperature doping of phosphorus to poly-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared poly-Si films with a thickness of 50 nm, and these films were crystallized using XeF excimer laser annealing . After laser doping, the concentration of P atoms in the poly-Si films was approximately 3.5 × 10 18 cm -3 , and the resistance of the poly-Si films decreased by approximately 0.003 times as compared with that before laser doping.

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Section: Resultsmentioning

confidence: 99%

P-25: Super Low Temperature Doping of Phosphorus to Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution

Suwa

Ikenoue

Oizumi³

et al. 2016

SID Symposium Digest of Technical Papers

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“…It has been extensively discussed that the grain size of poly-Si are significantly affected by melt duration of liquid Si and recrystallization mechanisms in our previous work [9,10]. Unfortunately, the physical phenomenon on ELC directly derived from melt duration obtained by TRORT measurement has not been reported until now.…”

Section: Complete Melting Of Si Thin Filmsmentioning

confidence: 94%

“…In this work, an in situ TRORT monitoring system is developed to extensively investigate the phase transformation dynamics of amorphous silicon (a-Si) thin films during excimer laser crystallization (ELC) [9][10][11][12]. The detailed interpretations for optical spectra obtained by TRORT measurements are elucidated.…”

Section: Introductionmentioning

confidence: 99%

In situ time-resolved optical measurements of a-Si thin films during excimer laser crystallization

Kuo

2011

Optik

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“…The PLM process has also an explosive behavior 32 because the two stages take place in a very short period of time. 33 As a result, the snow-plow effect tends to expel a certain quantity of the implanted impurities out of the sample through the surface.…”

Section: à2mentioning

confidence: 99%

Depth profile study of Ti implanted Si at very high doses

Olea

Pastor

Toledano-Luque

et al. 2011

Journal of Applied Physics

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A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution during the annealing. During the melting stage, the thickness of the implanted layer increases while the maximum peak concentration decreases (box-shaped effect). On the contrary, during the solidifying stage, the thickness of the layer decreases and the maximum peak concentration increases (snow-plow effect). Both effects are more pronounced as the energy density of the annealing increases. Moreover, as a direct consequence of the snow-plow effect, part of the impurities is expelled from the sample through the surface.

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Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements

Cited by 19 publications

References 31 publications

P-25: Super Low Temperature Doping of Phosphorus to Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution

P-25: Super Low Temperature Doping of Phosphorus to Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution

In situ time-resolved optical measurements of a-Si thin films during excimer laser crystallization

Depth profile study of Ti implanted Si at very high doses

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