Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Abstract

The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS1−xSex) for optoelectronic applications

“…Furthermore, the incorporation of Se affects the microstructural parameters like lattice strain (ε), dislocation density ( δ ), and the number of crystallites per unit surface area ( N ). The microstructural parameters were calculated using the following relations: 34 where ‘ t ’ is the film thickness. The evaluated quantities are presented in Table 1, which shows that the average crystallite size increased with the increase of Se doping in the SnS film up to 0.2 and then decreased with further Se doping as reported by Kafashan et al 35 The increase of crystallinity might have occurred for the formation of new nucleation centers from the dopant atoms.…”

Investigation of optical and electrical properties of the semiconducting α-KZnPO4 compound

“…The dislocation density ( δ ) gives an idea about the number of defects in the studied sample. It is calculated by using the equation: 18 …”

Effect of Sb addition on SbxSn1‐xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications

“…The optical density (OD) is associated with the absorption of light, which indicates the absorbing power of the material toward electromagnetic radiation 69 . Optical density was calculated by using the following relation 70 : $$\begin{equation}\;{\rm{OD}} = \alpha \times t\end{equation}$$where “‘ t ” represents the thickness of the sample. The change in “OD” with the wavelength ( λ ) is presented in Figure 5A, which follows the same pattern as the absorption coefficient ( α ).…”

“…The optical density (OD) is associated with the absorption of light, which indicates the absorbing power of the material toward electromagnetic radiation. 69 Optical density was calculated by using the following relation 70 :…”