Observation of intrinsic bistability in resonant tunnelling devices

Alves, E.S.; Eaves, L.; Henini, M.; Hughes, O. H.; Leadbeater, M.; Sheard, F. W.; Toombs, G. A.; Hill, G.; Pate, M.A.

doi:10.1049/el:19880809

Cited by 102 publications

(26 citation statements)

References 2 publications

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“…J(t) displays a non-adiabatic time-dependence which reflects the complex structure of |A(ǫ, t)| 2 and ImA(ǫ, t), which determine the out and in currents, respectively, see Eq. (76). The basic physical mechanism underlying the secondary maxima and minima in the current is the line-up of a photon-assisted resonant tunneling peak with the contact chemical potentials.…”

Section: General Formulation For Tunneling Systemsmentioning

confidence: 99%

Photon-assisted transport in semiconductor nanostructures

2004

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In this review we focus on electronic transport through semiconductor nanostructures which are driven by ac fields. Along the review we describe the available experimental information on different nanostructures, like resonant tunneling diodes, superlattices or quantum dots, together with the theoretical tools needed to describe the observed features. These theoretical tools such as, for instance, the Floquet formalism, the non-equilibrium Green's function technique or the density matrix technique, are suitable for tackling with photon-assisted transport problems where the interplay of different aspects like nonequilibrium, nonlinearity, quantum confinement or electron-electron interactions gives rise to many intriguing new phenomena. Along the review we give many examples which demonstrate the possibility of using appropriate ac fields to control/manipulate coherent quantum states in semiconductor nanostructures.

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Section: General Formulation For Tunneling Systemsmentioning

confidence: 99%

Photon-assisted transport in semiconductor nanostructures

2004

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“…The intrinsic bistability-where charge storage allows two different states of band bending for one applied bias-has been observed by Alves et al [9] and explained theoretically in [10] and [11]. The extrinsic bistability is illustrated in the load line analysis of Fig.…”

Section: Resultsmentioning

confidence: 67%

Integration of a resonant tunneling diode and an optical communications laser

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Ironside

Stanley

et al. 2005

2005 IEEE LEOS Annual Meeting Conference Proceedings

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“…The understanding of this charging behavior is important for the accurate calculation of electric field distributions across the structure and has been used to explain the observation of intrinsic device bistability observed in the current versus voltage ͓I(V)͔ characteristic. [6][7][8] Optical spectroscopy has proven to be a very fruitful technique for monitoring the charging behavior of DBRTS. The first observation of photoluminescence ͑PL͒ from the quantum well of a DBRTS was by Young et al 9 Holes, photocreated in the top contact region of the device are swept into the quantum well by the applied field where they recombine with electrons injected from an n doped bottom contact.…”

Section: Introductionmentioning

confidence: 99%

Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures

Buckle

Dawson

Kuo

et al. 1998

Journal of Applied Physics

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In this article we present photoluminescence and photoluminescence excitation spectroscopy data from three triple barrier resonant tunneling structures. The spectroscopic techniques are used to estimate the charge accumulation in both tunneling quantum wells of the devices as a function of bias. The charging behavior is extremely asymmetrical, with significant charge accumulation only in the quantum well adjacent to the emitter region of the device and not in the quantum well adjacent to the collector region, irrespective of the direction of bias. This asymmetry in the charging behavior is analogous to highly asymmetrical double barrier resonant tunneling structures. However, due to the two quantum wells present in the triple barrier design it provides a more flexible system to study charge density dependent effects. We also present evidence for negatively charged exciton formation in the first quantum well for both directions of applied bias.

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Observation of intrinsic bistability in resonant tunnelling devices

Cited by 102 publications

References 2 publications

Photon-assisted transport in semiconductor nanostructures

Photon-assisted transport in semiconductor nanostructures

Integration of a resonant tunneling diode and an optical communications laser

Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures

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