Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)

Xie, Qiwei; Kalburge, A.; Chen, P.; Madhukar, A.

doi:10.1109/68.508705

Cited by 135 publications

(47 citation statements)

References 14 publications

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“…The optical characteristics of the inter-band transitions of this material system have been significantly investigated, either for a pure physical understanding [2][3][4][5], or for employment in QD lasers [6,7]. Carriers are confined within the QDs in all 3 dimensions resulting in a delta-like density of states, which results in a temperature insensitive lasing threshold [8.9].…”

Section: Introductionmentioning

confidence: 99%

Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials

et al. 2016

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We describe a study of electro-absorption effects in high quality 1300nm InAs/GaAs quantum dot (QD) material grown by molecular beam epitaxy. The photocurrent spectra as a function of electric field is investigated and the quantum confined Stark shift of the QD states is compared to reports for various quantum well (QW) systems (GaAs/AlGaAs, InGaAs/GaAs, InGaAsP/InP). We show that the rate of shift of the QD absorption peak is smaller than that of the reported QW systems (~0.1 meV/kVcm-1 c.f. 0.15-0.2 meV/kVcm-1) and that the QD ground-state absorption is comparatively insensitive to the applied electric field. We observe a strong QD absorption peak at all biases up to avalanche breakdown, which is not observed in previous reports for these QW systems.

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Section: Introductionmentioning

confidence: 99%

Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials

et al. 2016

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“…46,47,48,49,50,51,52,53,54,55,56,57 The main focus is to understand the nature of surfaces changing from two-dimensional morphology (i.e., continuous thin films or low-profile, oneor two-monolayer height, two-dimensional clusters appearing in the early stage of highly strained epitaxial growth) to three-dimensional morphology (i.e., surfaces with 3D islands). From solid-state device perspective, early reports on laser oscillation 58,59 from devices that employed InGaAs 3D islands embedded in a GaAs matrix led further studies to clearly correlate optical characteristics of ensembles of 3D islands and lasing characteristics. InAs/GaAs(001) material system has been a vehicle to further understand the atomistic nature of two-dimensional cluster (1ML high) to three-dimensional island (typically 2~4 nm high) transition.…”

Section: Two-dimensional To Three-dimensional Morphological Transitionmentioning

confidence: 99%

Low-Dimensional Group III-V Compound Semiconductor Structures

Nobuhiko¹

2010

Cutting Edge Nanotechnology

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“…Xie et al [52] reported the first observation of lasing in edge emitting graded index separate confinement heterostructures (GRIN-SCH) containing vertically self-assembled multiple stacks of electronically uncoupled InAs 3D islands in the active region grown by MBE. A low threshold current density of 310 A/cm 2 at 79 K is found for a stack of five sets of islands corresponding to two monolayers of InAs depositions separated by 36 monolayers of GaAs spacers grown by migration enhanced epitaxy (MEE).…”

Section: Quantum Dot Lasersmentioning

confidence: 99%

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini

2006

Nanoscale Res Lett

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One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use selforganized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

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Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)

Cited by 135 publications

References 14 publications

Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials

Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials

Low-Dimensional Group III-V Compound Semiconductor Structures

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

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