Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using &lt;i&gt;In Situ&lt;/i&gt; High Energy X-Ray Diffraction

Hock, Rainer; Konias, Katja; Perdicaro, Laura M. S.; Magerl, A.; Hens, Philip; Wellmann, Peter J.

doi:10.4028/www.scientific.net/msf.645-648.29

Cited by 14 publications

(7 citation statements)

References 6 publications

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“…been shown that in situ visualization of the PVT growth process is possible by the application of x-ray imaging in 2D [92][93][94] (figure 5) and in 3D [81] (figure 6). Even the visualization of polytype-switching [95] and lattice plane bending during growth [96] by using in situ x-ray diffraction has been demonstrated.…”

Section: Process Control and In Situ Monitoringmentioning

confidence: 99%

Review of SiC crystal growth technology

Wellmann

2018

Semicond. Sci. Technol.

101

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The review article describes the interplay of fundamental research and advanced processes that have made SiC a unique semiconductor material for power electronic devices. Related to the outstanding physical properties of SiC, the preparation of this material is quite challenging. Processing is carried out at elevated temperatures that require special emphasis on the design of the growth machine and the applied construction materials. Growth inside a closed growth chamber demands the usage of advanced sensors and sophisticated computer simulation of the growth process. The application of advanced 2D and 3D in situ x-ray visualization techniques enables the visualization of the growth process. Reduction of the density of structural defects, a prerequisite for the technical application in power electronic devices, based on fundamental research and understanding of the crystallographic as well as the electronic properties of SiC beyond the knowledge base of standard semiconductor materials.

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Section: Process Control and In Situ Monitoringmentioning

confidence: 99%

Review of SiC crystal growth technology

Wellmann

2018

Semicond. Sci. Technol.

101

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“…Recently the 2D X‐ray topography method was extended to a 3D X‐ray computed tomography setup . For this purpose, the growth cell is rotated continuously or in a number of single steps while acquiring 2D X‐ray projection images (figure ).…”

Section: Growth Process Visualizationmentioning

confidence: 99%

Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping

Wellmann

Neubauer

Fahlbusch

et al. 2014

Crystal Research and Technology

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Silicon carbide single crystals have become widely used as substrates for power electronic devices like diodes and electronic switches. Today, 4inch and 6inch wafer diameters are commercially available which are processed from vapor grown crystals. The state of the art physical vapor transport method may be called mature. Nevertheless, low defect density and uniform doping are still topics which can be further improved by current research and development of more sophisticated processes and process control. The aim of the paper is to review the physical vapor transport growth method as applied today. Special emphasis will be put on currently less advanced in situ growth monitoring tools based on 2D and 3D X-ray imaging that could be a tool for production monitoring. These techniques allow a precise determination of the crystal and source material evolution. Another topic will be the processing of highly conductive p-type 4H-SiC which is of particular interest for power electronic switches

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“…In addition, the relationship between basal plane bending and growth parameters has been studied. Hock et al [ 15 ] investigated in situ lattice plane bending during crystal growth and demonstrated that lattice-plane bending and thermo-elastic stress vary with growth rate. Yang et al found that substrate attachment strongly affects basal plane bending and plastic-deformation-induced dislocations [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

et al. 2020

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We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate and becomes severe with increasing basal plane bending of the substrate. The SCD growth experiments show that the basal plane bending increases with elevated growth temperature and increased growth time. Finally, to understand the mechanism, we investigated the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapor deposition (CVD). This allowed us to propose a model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the base-plane bending of CVD diamond.

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Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using <i>In Situ</i> High Energy X-Ray Diffraction

Cited by 14 publications

References 6 publications

Review of SiC crystal growth technology

Review of SiC crystal growth technology

Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping

Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

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