Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells

An automated system for integrated electrophysical and optical studies of semiconductor nano heterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of param eters over the wafer. The setup includes the closed cycle helium cryogenic station, LCR meter, and temper ature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light emitting diodes, are presented.

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“…5b). We connect the centers recorded in the spectrum to the quantization levels in the MQW system [18].…”

Section: Determination Of the Energy Characteristics Of Deep Levels Amentioning

confidence: 99%

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

et al. 2015

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“…In [1,2] we have applied C-V technique for detailed investigation of charge carrier energy spectrum and concentration profile in light emitting heterostructures (LED) with multiple quantum wells InGaN/GaN. Unfortunately, the potential of the mentioned methods is principally limited by reverse breakdown voltage, which imposes restrictions on the achievable width of the space-charge region (and hence on accessible profiling depth), especially for comparatively heavily doped structures.…”

mentioning

confidence: 99%

Electrochemical profiling of heterostructures with multiple quantum wells InGaN/GaN

Зубков

Kucherova

Frolov

et al. 2013

Phys. Status Solidi C

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A method of electrochemical capacitance‐voltage profiling is used to characterize InGaN/GaN heterostructures with multiple quantum wells. Implementation of pulsed electrochemical etching allowed getting good planarity of etched surface despite of the high density of dislocations in GaN. The quality of etching, optimization of its parameters and independent check of etched depth were controlled by AFM measurements. Concentration profiles of InGaN/GaN QWs structures were evaluated then from capacitance‐voltage measurements revealing several quantum wells with a period of 17 nm. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Monte Carlo Simulation of the Radiation Output from a Led Structure with Textured Interfaces

et al. 2015

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A mathematical model of the radiation output from a LED structure is developed on the basis of the corpuscular Monte Carlo method. As a result of simulation of LED structures, regularities of the influence of the interfaces between the media and roughnesses introduced on these interfaces on the relative portion of the output radiation from the structure are obtained. Based on the analysis, specific recommendations are made on optimization of light emitting flip-chip-structures based on solid solutions of gallium nitride.

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Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells

Cited by 12 publications

References 7 publications

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

Electrochemical profiling of heterostructures with multiple quantum wells InGaN/GaN

Monte Carlo Simulation of the Radiation Output from a Led Structure with Textured Interfaces

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