Observation of many-body effects in the excitonic spectra of semiconductor quantum wires

Mott transition from a diluted exciton gas to a dense electron-hole plasma in a single V-shaped quantum wire

“…This background can be attributed to the radiative recombination processes which are assisted by Coulomb collisions between excitons or excitons and free carriers. Similar observations have been reported by Vouilloz et al 24 The calibration of the carrier density created in the QWR is made from the data of the saturation of exciton and biexciton emission intensities in the 0D regime QWR's. 25 We estimate that for a cw pump excitation at 1.75 eV, 400 W cm Ϫ2 correspond to 1 exciton per m-i.e., a carrier density of 10 4 cm Ϫ1 -and to a number na X equal to 7 ϫ10 Ϫ3 .…”

Exciton dynamics in atomically thin MoS2: Interexcitonic interaction and broadening kinetics

“…In a strong quantum- 6 confinement regime, the photo-generated excitons undergo many-body exciton-exciton repulsive interactions, whose typical spectroscopic signature appears as a red-shift in the DT spectra-a phenomenon known as exciton self-energy renormalization. 36,38,39,41 Figure 3d illustrates excitons shows similar dynamics. This is a classic indication of inter-excitonic interaction; in the many-body interaction regime, the energy shift arises from the mutual interactions between two exciton particles, rather than from single-particle interactions.…”

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

“…Kinked quantum wells grown by MBE on GaAs ridges have been reported by Koshiba et al [18] while kinked quantum wells grown with organometallic chemical vapor deposition (MOCVD) in V-grooves on GaAs substrates have already been obtained by Kapon et al [19]. They have shown that the additional confinement at the kinks of the quantum well can lead to quantum wire like [20] and quantum dot like [21] electronic states and have also demonstrated various devices [22,23].…”