Observation of Nanoscale Skyrmions in SrIrO<sub>3</sub>/SrRuO<sub>3</sub> Bilayers

Meng, Keng Yuan; Ahmed, Adam; Baćani, Mirko; Mandru, Andrada-Oana; Zhao, Xue; Bagués, Núria; Esser, Bryan D.; Flores, Jose; McComb, David W.; Hug, Hans J.; Yang, Fengyuan

doi:10.1021/acs.nanolett.9b00596

Cited by 134 publications

(151 citation statements)

References 36 publications

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“…With these differences, we are confident that the current result represents a novel strategy to engineer the THE in SrRuO 3 . It is interesting to note that using magnetic force microscope (MFM), some studies observe the nanoscale skyrmion in the ultra-thin SrRuO 3 heterostructures 13,16,39 , and therefore attributed the observed THE to the formation of skyrmion. We speculate that this also forms a plausible explanation for our result since our sample holds all essential ingredients required to host Skyrmion: broken inversion symmetry, strong spin-orbital coupling and reduced magnetization.…”

Section: Discussionmentioning

confidence: 99%

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution

et al. 2020

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Ionic substitution forms an essential pathway to manipulate the structural phase, carrier density and crystalline symmetry of materials via ion-electron-lattice coupling, leading to a rich spectrum of electronic states in strongly correlated systems. Using the ferromagnetic metal SrRuO 3 as a model system, we demonstrate an efficient and reversible control of both structural and electronic phase transformations through the electric-field controlled proton evolution with ionic liquid gating. The insertion of protons results in a large structural expansion and increased carrier density, leading to an exotic ferromagnetic to paramagnetic phase transition. Importantly, we reveal a novel protonated compound of HSrRuO 3 with paramagnetic metallic as ground state. We observe a topological Hall effect at the boundary of the phase transition due to the proton concentration gradient across the film-depth. We envision that electric-field controlled protonation opens up a pathway to explore novel electronic states and material functionalities in protonated material systems.

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Section: Discussionmentioning

confidence: 99%

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution

et al. 2020

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“…In SRO epitaxial heterostructures hosting a fine balance between el-el correlation and SOC, interfacial inversion-symmetry-breaking can activate the Dzyaloshinskii-Moriya interaction (DMI). As a consequence, magnetic skyrmions and chiral magnetic domains can be stabilized and embedded in a ferromagnetic matrix (32)(33)(34)(35)(36). The resultant inhomogeneity in real-space Berry curvature inevitably induces a superposition of THE and AHE signals ( Fig.…”

Section: Introductionmentioning

confidence: 99%

“…The resultant inhomogeneity in real-space Berry curvature inevitably induces a superposition of THE and AHE signals ( Fig. 1, A (32)(33)(34)(35). Soon after the discoveries of THE in SRO heterostructures, an alternative interpretation based on spatial inhomogeneity in AHE and k-space Berry curvature was proposed (37)(38)(39).…”

Section: Introductionmentioning

confidence: 99%

Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO₃ Ultrathin Films

et al. 2020

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In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example is Hall anomalies observed in SrRuO 3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect (THE) or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the AHE of SrRuO 3 ultrathin films with controllable inhomogeneities in film thickness (t SRO ). By harnessing the step-flow growth of SrRuO 3 films, we induced microscopically-ordered stripes with oneunit-cell differences in t SRO . The resultant spatial distribution of momentum-space Berry curvatures enables a two-channel AHE, which shows hump-like anomalies similar to the THE and can be continuously engineered via sub-unit-cell control of t SRO . In these inhomogeneous SRO films, we microscopically identified a two-step magnetic switching and stripe-like ferromagnetic domains. These features are fingerprints for distinguishing the two-channel AHE from the skyrmion-induced THE.

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“…It has been reported that the density of the skyrmions is proportional to the component of THE in AHE signal. [ 3,10,39 ] These discussions imply that the magnetic skyrmion should be responsible for the THE in SRO/BFO heterostructures. We noted that the inhomogeneous thickness (thickness difference of 0.5 nm) have been used for interpreting the anomaly in AHE.…”

Section: Figurementioning

confidence: 99%

Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures

et al. 2020

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Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii–Moriya interaction (DMI). Here, magnetic topological states in a 40‐unit cells (16 nm) SrRuO3 layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI. By controlling the thickness of an antiferromagnetic and ferromagnetic layer, interfacial ionic polarization, as well as the transformation between ferromagnetic and magnetic topological states, can be modulated. Using micromagnetic simulations, the formation and stability of robust magnetic skyrmions in SrRuO3/BiFeO3 heterostructures are elucidated. Magnetic skyrmions in thick multiferroic heterostructures are promising for the development of topological electronics as well as rendering a practical approach to extend the interfacial topological phenomena to bulk via antiferromagnetic order.

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Observation of Nanoscale Skyrmions in SrIrO₃/SrRuO₃ Bilayers

Cited by 134 publications

References 36 publications

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution

Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO₃ Ultrathin Films

Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures

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Observation of Nanoscale Skyrmions in SrIrO3/SrRuO3 Bilayers

Cited by 134 publications

References 36 publications

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution

Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films

Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures

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Observation of Nanoscale Skyrmions in SrIrO₃/SrRuO₃ Bilayers

Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO₃ Ultrathin Films