“…This mode has been applied to studies of growth-induced lattice strains in single crystals, 28,29 epitaxial substrate/film misfit in semiconductor multilayers, [30][31][32][33] electric field dependent structural changes in nonlinear optic materials, 34,35 and studies of phase transitions in single crystals. 36 • The nonsystematic case, particularly for the case where for a set of two equivalent reflections the entrance point of the Ewald sphere, is nearly coincident with the exit position. This mode has been applied to the accurate measurement of lattice parameters 37,38 by measuring the angular separation of the two reflections.…”