Observation of precursor pair formation of recombining charge carriers

Behrends, Jan; Lips, K.; Boehme, Christoph

doi:10.1103/physrevb.80.045207

Cited by 14 publications

(12 citation statements)

References 32 publications

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“…Strategies were presented to study defect structures in TFS and OPV solar cells on the nano scale, 50 locate defect centres in multilayer devices 48,53 and conclude on the underlying transport pathways. 32,48,53 For thin film mc-Si:H pin solar cells we could show that electron hopping is the dominating spin-dependent transport pathway in a-Si:H as well as in the mc-Si:H absorber layer at low temperatures. In both materials hopping involves conduction band-tail states.…”

Section: Resultsmentioning

confidence: 97%

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

Schnegg

Behrends

Fehr

et al. 2012

Phys. Chem. Chem. Phys.

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In thin film solar cells based on non-crystalline thin film silicon or organic semiconductors structural disorder leads to localized states that induce device limiting charge recombination and trapping. Both processes frequently involve paramagnetic states and become spin-dependent. In the present perspectives article we report on advanced pulsed electrically detected magnetic resonance (pEDMR) experiments for the study of spin dependent transport processes in fully processed thin film solar cells. We reflect on recent advances in pEDMR spectroscopy and demonstrate its capabilities on two different state of the art thin film solar cell concepts based on microcrystalline silicon and organic MEH-PPV:PCBM blends, recently studied at HZB. Benefiting from the increased capabilities of novel pEDMR detection schemes we were able to ascertain spin-dependent transport processes and microscopically identify paramagnetic states and their role in the charge collection mechanism of solar cells.

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Section: Resultsmentioning

confidence: 97%

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

Schnegg

Behrends

Fehr

et al. 2012

Phys. Chem. Chem. Phys.

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“…Due to its high selectivity and sensitivity, EDMR is ideally suited for the assignment and structural characterization of paramagnetic states determining charge transport and loss mechanisms in organic and Si solar cells [13][14][15][16][17][18][19][20]. Recently, it was shown that the application range of EDMR as compared to continuous wave (CW EDMR) may be further boosted by pulsed (pEDMR) detection schemes [9,11,[21][22][23][24][25][26], which greatly increased the selectivity to different spin-dependent transport mechanisms and spin coupling parameters as well as the spectral resolution [27][28][29][30][31][32][33][34][35][36]. Up to now most CW and pEDMR studies employed conventional X-band (9.4 GHz/350 mT) spectrometers.…”

Section: Introductionmentioning

confidence: 99%

CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells

Akhtar

Schnegg

Veber

et al. 2015

Journal of Magnetic Resonance

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Here we describe a new high frequency/high field continuous wave and pulsed electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating at 263 GHz and resonance fields between 0 and 12 T. Spin dependent transport in illuminated hydrogenated amorphous silicon p-i-n solar cells at 5 K and 90 K was studied by in operando 263 GHz CW and pEDMR alongside with complementary X-band CW EDMR. Benefiting from the superior resolution at 263 GHz, we were able to better resolve EDMR signals originating from spin dependent hopping and recombination processes. 5 K EDMR spectra were found to be dominated by conduction and valence band tale states involved in spin dependent hopping, with additional contributions from triplet exciton states. 90 K EDMR spectra could be assigned to spin pair recombination involving conduction band tail states and dangling bonds as dominating spin dependent transport process, with additional contributions from valence band tail and triplet exciton states.

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“…8,9 In SDR, a conduction electron (or valence hole) may couple with an unpaired electron in a deep level defect prior to a recombination event in an appropriately biased device. [10][11][12][13][14] The pairing of spins form triplet and singlet states; the latter are characterized as having zero angular momentum. Because recombination involves no change in angular momentum, only singlet pairs will be involved in recombination because spin orbit coupling is relatively weak in the silicon material system.…”

mentioning

confidence: 99%

Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions

Cochrane

Lenahan

2013

Applied Physics Letters

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Articles you may be interested inIdentification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination Appl. Phys. Lett. 100, 023509 (2012); 10.1063/1.3675857 Modeling of spin metal-oxide-semiconductor field-effect transistor: A nonequilibrium Green's function approach with spin relaxation J. Appl. Phys. Observation of trapping defects in 4 H -silicon carbide metal-oxide-semiconductor field-effect transistors by spindependent recombination Appl. Phys. Lett. 86, 023503 (2005); 10.1063/1.1851592Comment on "Do P b1 centers have levels in the Si band gap? Spin-dependent recombination study of the P b1 'hyperfine spectrum'" [Appl.

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Observation of precursor pair formation of recombining charge carriers

Cited by 14 publications

References 32 publications

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells

Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions

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