Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films

Kaneta, Shingo; Anh, Lê Đức; Sriharsha, Karumuri; Tanaka, Masaaki

doi:10.7567/1882-0786/ab25c8

Cited by 4 publications

(1 citation statement)

References 22 publications

(35 reference statements)

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“…In addition, a large spontaneous spin-splitting in their band structures and strong s(p)-d exchange interactions provide notable benefits for device applications by utilizing band and wavefunction engineering. 20,27,28 These unique features make the Fe-based FMSs one of the most promising material platforms for future spin-based electronics. Towards realization of practical spintronic devices of these Fe-doped FMSs, demonstration of the spin-valve effects such as GMR and TMR using these materials will be an important milestone; however, it is still lacking.…”

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confidence: 99%

Spin-valve magnetoresistance in ferromagnetic semiconductor (Ga, Fe)Sb heterostructures with high Curie temperature

Takase

Anh

Takiguchi

et al. 2019

2019 Compound Semiconductor Week (CSW)

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We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness tInAs nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with tInAs = 3 nm, which originates from the parallel -antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing tInAs (from 9 to 3 nm) due to the enhancement of the interface scattering. This is the first demonstration of the spin-valve effect in Fe-doped FMS heterostructures, paving the way for device applications of these high-TC FMSs.

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confidence: 99%

Spin-valve magnetoresistance in ferromagnetic semiconductor (Ga, Fe)Sb heterostructures with high Curie temperature

Takase

Anh

Takiguchi

et al. 2019

2019 Compound Semiconductor Week (CSW)

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Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

Zhi

et al. 2021

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We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.

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Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature

Takase

Anh

Takiguchi

et al. 2020

Applied Physics Letters

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We demonstrate spin-valve magnetoresistance (MR) with a current-in-plane (CIP) configuration in (Ga,Fe)Sb/InAs (thickness tInAs nm)/(Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with tInAs = 3 nm, which originates from the parallel-antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb/InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing tInAs (from 9 to 3 nm) due to the enhancement of the interface scattering. This demonstration of the spin-valve effect in Fe-doped FMS heterostructures paves the way for device applications of the high-TC FMS.

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Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films

Cited by 4 publications

References 22 publications

Spin-valve magnetoresistance in ferromagnetic semiconductor (Ga, Fe)Sb heterostructures with high Curie temperature

Spin-valve magnetoresistance in ferromagnetic semiconductor (Ga, Fe)Sb heterostructures with high Curie temperature

Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature

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