Observation of recorded tracks in GeSbTe phase-change media by AFM

Wu, Zhanghua; Gan, Fuxi; Hu, Jun; Li, Minqian

doi:10.1016/0169-4332(93)90193-f

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…Previous AFM studies have reported either a strong ͑40%͒ increase in film thickness 18 or the formation of craters, which were several 10 nm deep, surrounded by an ϳ100 nm high bulge 19 upon laser irradiation of amorphous GeSbTe alloy films. In these studies the formation of bulges is attributed to the development of large crystal grains whereas the formation of the craters is explained by reamorphization upon melting.…”

Section: Discussionmentioning

confidence: 97%

Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5

Weidenhof

Friedrich

Ziegler

et al. 1999

Journal of Applied Physics

133

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Section: Discussionmentioning

confidence: 97%

Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5

Weidenhof

Friedrich

Ziegler

et al. 1999

Journal of Applied Physics

133

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“…Memory applications are based on revisable phase change between amorphous and crystalline states of GST occurring less than ~100 ns, at room temperature, these two states are stable [4]. The amorphous state is created by heating the material above its melting temperature and letting it cool down rapidly, the crystalline state is accomplished by heating it above the crystallization temperature for a long-enough time [5].…”

Section: Introductionmentioning

confidence: 99%

Phase Transition of GeSbTe Thin Films Induced by Thermal Treatment and Laser Irradiation

Chen

Yang

et al. 2013

AMR

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GeSbTe (GST) thin films were deposited on Si substrates using electron beam evaporation system and then annealed in nitrogen atmosphere at different temperatures. X-ray diffraction (XRD) and Atomic Force Microscope (AFM) measurements were used to characterize as-deposited and annealed films. Annealing treatment was found to induce changes in microstructure, surface roughness, grain size and so on, indicating that with the increase of annealing temperature, the amorphous state of GST materials change first to face-centered-cubic (fcc) phase state and finally to the stable hexagonal (hex) state. Amorphous Ge1Sb2Te4film will crystallize under laser irradiation. With increasing irradiation time or irradiation power, the degree of crystallization increases. The Raman spectra of thin film shows three peaks after laser irradiation, the peaks can be attributed to the key vibrations which were caused by crystallization. With the irradiation time increases, the peaks shift.

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