Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers

Higashi, T.; Sweeney, S. J.; Phillips, A.F.; Adams, A.R.; O’Reilly, Eoin P.; Uchida, T.; Fujii, Toshio

doi:10.1109/68.752531

Cited by 30 publications

(12 citation statements)

References 8 publications

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“…Piston-in-cylinder systems have considerably lower maximum operating pressures than DACs but pressures ~10 kbar are typically all that is required for laser characterisation, easily within the capabilities of a piston-in-cylinder apparatus. The piston-in-cylinder in use at Surrey has the advantage of a very large sample space (~cm 3 ) making device studies relatively straightforward. Electrical feedthroughs are easily made possible by the use of conical Vespel seals and metal pins [6].…”

Section: High Pressure Techniques Applied To Semiconductor Lasersmentioning

confidence: 99%

“…The development of such materials requires a detailed understanding of the thermal factors influencing device characteristics over their operating temperature range. InGaAlAs/InP-based lasers have exhibited improved thermal performance compared with InGaAsP/InP devices at 1.3 µm [2,3] and the first cooler-less 1.3 µm laser modules are becoming a commercial reality [4]. It is of great interest to extend this benefit to longer wavelengths for many applications such as optical pump and signal applications for telecommunications and for gas detection in the 1400-1600 nm band.…”

Section: Introductionmentioning

confidence: 99%

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Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers

Sweeney

McConville

Massé

et al. 2004

Physica Status Solidi (b)

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The improved thermal stability of InGaAlAs-based lasers compared with InGaAs-based lasers for 1.5 µm operation is investigated using a combination of low temperature and high pressure techniques. The results indicate that the improved performance of InGaAlAs-based devices is due to a reduction in the contribution of the non-radiative Auger recombination current, I Aug , to the total threshold current, I th , in the InGaAlAs devices. This is due to the higher conduction band offset made possible with the InGaAlAs system which results in a lower hole density in the quantum wells at threshold.

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Section: High Pressure Techniques Applied To Semiconductor Lasersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers

Sweeney

McConville

Massé

et al. 2004

Physica Status Solidi (b)

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“…One of the main reasons for this design preference is the fact that BH lasers have a significantly lower beam aspect ratio compared to RWG devices, which makes them more suitable for cheap systems employing butt This bias to buried heterostructure structures had recently abated when Al-containing AlInAs I InGaAsP 1 .3-1 .55 mm emitters emerged in the telecom arena [9].…”

Section: Introductionmentioning

confidence: 99%

High-power 1300-nm Fabry-Perot and DFB ridge-waveguide lasers

Garbuzov

Maiorov

Menna

et al. 2002

Novel in-Plane Semiconductor Lasers

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In this paper we summarize the results [1] on the development of high power 1 300 nm ridge waveguide Fabry-Perot and distributed-feedback (DFB) lasers.Improved performance of MOCVD grown InGaAsP/InP laser structures and optimization of the ridge waveguide design allowed us to achieve more than 800 mW output power from 1300 nm single mode Fabry-Perot lasers. Despite the fact that the beam aspect ratio for ridge lasers (300 x 12°) is higher than that for buried devices, our modeling and experiments demonstrated that the fiber coupling efficiency of about 75-80% could be routinely achieved using a lensed fiber or a simple lens pair. Fiber power of higher than 600 mW was displayed.Utilizing similar epitaxial structures and device geometry, the 1300 nm DFB lasers with output power of 500 mW have been fabricated. Analysis of the laser spectral characteristics shows that the high power DFB lasers can be separated into several groups. The single frequency spectral behavior was exhibited by about 20 % of all studied DFB lasers. For these lasers, side-mode suppression increases from 45dB at low current up to 60 dB at maximum current. About 30 % of DFB lasers, at all driving currents, demonstrate multi-frequency spectra consisting of 4-8 longitudinal modes with mode spacing larger than that for Fabry-Perot lasers of the same cavity length. Both single frequency and multi frequency DFB lasers exhibit weak wavelength-temperature dependence and very low relative intensity noise (RIN) values.Fabry-Perot and both types of DFB lasers can be used as pump sources for Raman amplifiers operating in the 1 300 nm wavelength range where the use of EDFA is not feasible. In addition, the single-mode 1 300 nm DFB lasers operating in the 500 mW power range are very attractive for new generation of the cable television transmission and local communication systems.Keywords: ridge-waveguide 13 10 nm high-power diode laser, distributed feedback laser, relative intensity noise.

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“…Since hydrostatic pressure causes an increase in the direct band gap of III -V semiconductors, this leads to a shift towards larger emission energy of lasers with increasing pressure. Pressure also strongly changes the threshold current of lasers through the distinct E g -dependencies of different carrier recombination mechanisms [2][3][4][5]. This is of importance when considering the pressure dependence of the threshold current in lasers since the modal confinement is directly related to the refractive index, via the threshold carrier density.…”

mentioning

confidence: 99%

Wavelength dependence of the modal refractive index in 1.3 μm InGaAsP, AlGaInAs and GaInNAs lasers using high pressure

Jin

Sweeney

Adams

et al. 2003

Physica Status Solidi (b)

Self Cite

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We report the variation of the modal refractive index at threshold with lasing wavelength in 1.3 µm InGaAsP, AlGaInAs and GaInNAs multiple quantum well lasers by measuring mode spectra under pressure up to 15 kbar. It is shown that the decrease of index with lasing wavelength is about 4% on average in the pressure range studied. We also find that the modal refractive index reduces with increasing injection current and is very sensitive to the injection current around laser threshold. IntroductionThe requirement of both electron confinement and optical mode confinement is the basic principle of the design of semiconductor quantum-well lasers. The former strongly depends on the band offset of the heterostructures and the latter is mainly associated with the difference in the refractive index between the waveguiding core and the cladding layers. It is well known that the refractive index strongly depends on the direct band gap of semiconductor materials and is also influenced by injected current [1]. Since hydrostatic pressure causes an increase in the direct band gap of III -V semiconductors, this leads to a shift towards larger emission energy of lasers with increasing pressure. Pressure also strongly changes the threshold current of lasers through the distinct E g -dependencies of different carrier recombination mechanisms [2][3][4][5]. This is of importance when considering the pressure dependence of the threshold current in lasers since the modal confinement is directly related to the refractive index, via the threshold carrier density. A knowledge of how the modal refractive index varies with wavelength is therefore useful when considering the pressure behaviour of lasers. In this paper, we report the variation of the modal refractive index at threshold with lasing wavelength in 1.3 µm InGaAsP, AlGaInAs and GaInNAs multiple quantum wells (MQWs) lasers by measuring mode spectra under pressure up to 15 kbar at room temperature (RT).

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Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers

Cited by 30 publications

References 8 publications

Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers

Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers

High-power 1300-nm Fabry-Perot and DFB ridge-waveguide lasers

Wavelength dependence of the modal refractive index in 1.3 μm InGaAsP, AlGaInAs and GaInNAs lasers using high pressure

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