Observation of room-temperature superparamagnetic behavior of Fe5Si3 nanocrystals synthesized via 50 keV Fe ion implantation in silicon

Singh, Satyabrata; Young, Joshua M.; Jones, Daniel C.; Berman, Diana; Rout, B.

doi:10.1007/s00339-020-3417-8

Cited by 4 publications

(1 citation statement)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Indeed, ion implantation is a widely applied technique not only to modify the electronic and optical properties of semiconducting and insulating materials. This technique is well suitable for the formation of metal and semiconductor nanoclusters in different matrix [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40].…”

Section: Introductionmentioning

confidence: 99%

Radiative recombination in zinc blende ZnSe nanocrystals ion-beam synthesized in silica

Пархоменко¹,

Власукова²,

Комаров³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Zinc selenide nanocrystals (NCs) were successfully synthesized in silicon dioxide (silica grown on a silicon wafer) by high-fluence implantation of Zn+ and Se+ ions with subsequent rapid thermal annealing at 1000°C for 3 min. The high crystalline quality of the zinc blende ZnSe nanoclusters was proven by transmission electron microscopy with selected area electron diffraction and Raman spectroscopy. Low-temperature photoluminescence (PL) reveals the recombination of excitons in ZnSe, what further indicates a good crystalline quality of the synthesized nanocrystals. PL analysis shows a strong coupling of phonons and excitons. The Huang−Rhys parameter of the longitudinal optical phonon in the exciton transition S is in the range of 0.6−0.7. Despite the excellent quality of the ZnSe NCs synthesized in silica, defect states inside the NCs or at the NCs/SiO2 interface with activation energies of 0.1–0.2, 0.45 and 0.67 eV play a crucial role in radiative recombination.

show abstract