Observation of Single-Electron Charging Effect in BiSrCaCuO Granular Thin Films

Han, Xu; Shinohara, M.; Yoshikawa, Nobuyuki; Sugahara, Masanori

doi:10.1143/jjap.32.l1516

Cited by 4 publications

(5 citation statements)

References 8 publications

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“…Another type of study of SEDs has been performed using random dot arrays in which a number of nanodots are randomly distributed, for example, dispersion of chemically synthesized nanodots or self-assembled dot growth in thin metal films fabricated by vacuum deposition. 2,25,[34][35][36][37][38][39][40] Although there was a concern that the CB properties from individual dots would be masked because of the complex dot arrangement forming numerous conduction paths, the CB operation was successfully detected, 25,[34][35][36][37][38][39][40][41][42][43][44] and clear oscillation has even been demonstrated. 25,38,[42][43][44] In our previous studies on random-array SEDs composed of Fe nanodots formed by vacuum deposition, the oscillation characteristics originating from a single dot could be observed in a certain Fe thickness range, 42) and we discussed the logic gate operation using the double-gate device.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of the single-electron conduction properties of randomly distributed metal nanodot arrays

Gyakushi,

Amano,

Tanizawa

et al. 2024

Jpn. J. Appl. Phys.

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Multi-dot single-electron devices (SEDs) have been fabricated using very thin Fe films by vacuum deposition on thermally oxidized or sputter-deposited SiO2 substrates. Although the SEDs fabricated on the two substrates showed very different conductance, Coulomb blockade (CB) oscillation clearly appeared in certain Fe thickness ranges for both cases. The CB oscillation changed from complex to simple with increasing Fe thickness, indicating that the decrease of the number of dots contributed to the CB oscillation. While the simple CB monotonically disappeared by the drain voltage (V D), the complex CB was robust against V D because V D distributes over the array composed of plural dots. The CB property change from complex to simple appeared in different thickness ranges for the two substrates, but in similar conductance ranges. This demonstrates that the conductance influenced by the inter-dot distance is an important factor for the CB characteristics of randomly distributed multi-dot SEDs.

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Section: Introductionmentioning

confidence: 99%

Characteristics of the single-electron conduction properties of randomly distributed metal nanodot arrays

Gyakushi,

Amano,

Tanizawa

et al. 2024

Jpn. J. Appl. Phys.

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“…Besides nanodot fabrication methods that use lithography as reported in previous work, dispersion of chemically synthesized nanodots or self-assembled nanodot growth by thin-film deposition can be used to form nanodot array devices 5 , 29 – 35 . In these cases, the array comprises randomly distributed nanodots and numerous conduction paths with different properties must form.…”

Section: Introductionmentioning

confidence: 99%

“…In these cases, the array comprises randomly distributed nanodots and numerous conduction paths with different properties must form. Although single-electron tunneling properties might be difficult to detect in such complex systems, Coulomb blockade properties are frequently detected; 29 – 38 and the modulation that is caused by the gate voltage is evident and straightforward in some cases 32 , 35 , 37 , 38 . To determine the potential of these complex array SEDs, further investigations using multigate operation are required.…”

Section: Introductionmentioning

confidence: 99%

Double gate operation of metal nanodot array based single electron device

Gyakushi

Amano

Tsurumaki‐Fukuchi

et al. 2022

Sci Rep

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Multidot single-electron devices (SEDs) can enable new types of computing technologies, such as those that are reconfigurable and reservoir-computing. A self-assembled metal nanodot array film that is attached to multiple gates is a candidate for use in such SEDs for achieving high functionality. However, the single-electron properties of such a film have not yet been investigated in conjunction with optimally controlled multiple gates because of the structural complexity of incorporating many nanodots. In this study, Fe nanodot-array-based double-gate SEDs were fabricated by vacuum deposition, and their single-electron properties (modulated by the top- and bottom-gate voltages; VT and VB, respectively) were investigated. The phase of the Coulomb blockade oscillation systematically shifted with VT, indicating that the charge state of the single dot was controlled by both the gate voltages despite the metallic random multidot structure. This result demonstrates that the Coulomb blockade oscillation (originating from the dot in the multidot array) can be modulated by the two gates. The top and bottom gates affected the electronic state of the dot unevenly owing to the geometrical effect caused by the following: (1) vertically asymmetric dot shape and (2) variation of the dot size (including the surrounding dots). This is a characteristic feature of a nanodot array that uses self-assembled metal dots; for example, prepared by vacuum deposition. Such variations derived from a randomly distributed nanodot array will be useful in enhancing the functionality of multidot devices.

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“…Besides nanodot fabrication using lithography adopted in several previous reports, the dispersion of chemically synthesized nanodots or self-assembled nanodot growth in thin-lm deposition can be used to form nanodot-array devices 5,[29][30][31][32][33][34][35] . In these cases, the array comprises randomly distributed nanodots and numerous conduction paths with different properties must be formed.…”

Section: Introductionmentioning

confidence: 99%

“…In these cases, the array comprises randomly distributed nanodots and numerous conduction paths with different properties must be formed. Although the single-electron tunneling properties may be di cult to detect in such complex systems, the Coulomb blockade properties were frequently detected [29][30][31][32][33][34][35][36][37][38] and the modulation caused by the gate voltage was clear and simple in some cases 32,35,37,38 . To determine the potential of these complex-array SEDs, further investigations using multigate operation are required.…”

Section: Introductionmentioning

confidence: 99%

Double-Gate Operation of Metal Nanodot-Array-Based Single-Electron Device

Gyakushi

Amano

Tsurumaki‐Fukuchi

et al. 2022

Preprint

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Multidot single-electron devices (SEDs) can realize new types of computing technologies, such as reconfigurable and reservoir computing. The self-assembled metal nanodot-array film attached with multiple gates is a candidate for use in such SEDs to achieve high functionality. However, the single-electron properties of such a film have not yet been investigated in use with optimally controlled multiple gates because of structural complexity having many nanodots. In this study, Fe nanodot-array-based double-gate SEDs were fabricated and their single-electron properties modulated by the top- and bottom-gate voltages (VT and VB, respectively) were investigated. As reported in our previous study, the drain current (ID) exhibited clear oscillations against VB (i.e., Coulomb blockade oscillation) in a part of the devices, originating from a single dot among several dots. The phase of the Coulomb blockade oscillation systematically shifted with VT, indicating that the charge state of the single dot was clearly controlled by both the gate voltages despite the multidot structure and the metal multidot SED has potential for logic-gate operation. The top and bottom gates affected the electronic state of the dot unevenly owing to the geometrical effect caused by the dot shape and size of the surrounding dots.

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Observation of Single-Electron Charging Effect in BiSrCaCuO Granular Thin Films

Cited by 4 publications

References 8 publications

Characteristics of the single-electron conduction properties of randomly distributed metal nanodot arrays

Characteristics of the single-electron conduction properties of randomly distributed metal nanodot arrays

Double gate operation of metal nanodot array based single electron device

Double-Gate Operation of Metal Nanodot-Array-Based Single-Electron Device

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