Observation of some new traps introduced by low-energy Ar+ ion bombardment on n-GaAs

Vaseashta, Ashok; Burton, L. C.

doi:10.1016/0168-583x(91)95756-4

Cited by 3 publications

(1 citation statement)

References 18 publications

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“…This damage has been analyzed by many different techniques like transmission electron microscopy ͑TEM͒, 1 deep-level transient spectroscopy ͑DLTS͒, [2][3][4] channeling Rutherford backscattering spectrometry ͑RBS͒, 5 photoluminescence ͑PL͒, 6 and electrical characterization of electronic components. This damage has been analyzed by many different techniques like transmission electron microscopy ͑TEM͒, 1 deep-level transient spectroscopy ͑DLTS͒, [2][3][4] channeling Rutherford backscattering spectrometry ͑RBS͒, 5 photoluminescence ͑PL͒, 6 and electrical characterization of electronic components.…”

Section: Introductionmentioning

confidence: 99%

Influence of in situ argon cleaning of GaAs on Schottky diodes and metal–semiconductor field-effect transistors

Hassel¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor Effects of low-temperature-grown GaAs and AlGaAs on the current of a metal-insulator-semiconductor structure WSi x refractory metallization for GaAs metal-semiconductor field-effect transistors Neutron radiation effects in GaAs ion-implanted metal-semiconductor field-effect transistors Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAsThe influence of in situ argon cleaning of GaAs on the electrical characteristics of Schottky diodes and metal-semiconductor field-effect transistors ͑MESFETs͒ is investigated. The beam energy was varied from 50 to 500 eV and the characteristics were compared to wet chemically cleaned devices. The characteristics of the Schottky diodes showed a significant degradation as a consequence of damage introduced by argon cleaning. Recovery was obtained with an additional annealing step at 300°C for diodes cleaned at energies below 125 eV. For higher energies, the samples became worse with annealing. MESFETs showed degraded performances for positive gate voltages due to a high gate leakage current. Improvement was also obtained upon annealing.

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Section: Introductionmentioning

confidence: 99%

Influence of in situ argon cleaning of GaAs on Schottky diodes and metal–semiconductor field-effect transistors

Hassel¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation

Barber

1993

Ultramicroscopy

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Differential Reflectance Studies of Structural Changes in GaAs Caused by Ar⁺ Ion Bombardment

Ludwig

Hummel

1993

MRS Proc.

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Differential reflection (DR) spectrometry has been used to investigate and characterize the effect of sputter damage of GaAs by Ar÷ ions. The DR technique provides the photon-induced critical point interband transition energies which are sensitive to the electron and the crystal structure. The spectral dependence of the normalized difference in reflectivity is obtained by periodically scanning monochromatic light across a pair of GaAs samples. In the present case one part has been damaged by Ar÷ ions with energies ranging from 500 to 5000 eV. The other half is the undamaged reference. The DR structure caused by interband transitions and designated as E, and E, + ,& were found to shift in energy with increasing ion beam energy or with sputter damage. Two annealing stages were observed, one at 200'C and the other between 400'C and 450'C. They were attributed to different recovering mechanisms of As Frenkel pairs.

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Observation of some new traps introduced by low-energy Ar+ ion bombardment on n-GaAs

Cited by 3 publications

References 18 publications

Influence of in situ argon cleaning of GaAs on Schottky diodes and metal–semiconductor field-effect transistors

Influence of in situ argon cleaning of GaAs on Schottky diodes and metal–semiconductor field-effect transistors

Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation

Differential Reflectance Studies of Structural Changes in GaAs Caused by Ar⁺ Ion Bombardment

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Observation of some new traps introduced by low-energy Ar+ ion bombardment on n-GaAs

Cited by 3 publications

References 18 publications

Influence of in situ argon cleaning of GaAs on Schottky diodes and metal–semiconductor field-effect transistors

Influence of in situ argon cleaning of GaAs on Schottky diodes and metal–semiconductor field-effect transistors

Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation

Differential Reflectance Studies of Structural Changes in GaAs Caused by Ar+ Ion Bombardment

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Product

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Differential Reflectance Studies of Structural Changes in GaAs Caused by Ar⁺ Ion Bombardment