Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators

Zhou, Liqing; Song, Hongkang; Li, Kai; Luan, Zhongzhi; Wang, Peng; Sun, Lei; Jiang, Shengwei; Xiang, Hongjun; Chen, Yanbin; Du, Jun; Ding, Haifeng; Xia, Ke; Xiao, Jiang; Wu, Di

doi:10.1126/sciadv.aao3318

Cited by 36 publications

(28 citation statements)

References 51 publications

(113 reference statements)

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“…Hence, using a ferromagnetic insulator, one can extract the ratio of the reduced spin relaxation lengths q 1 1 and q 1 2 by a precise measurement of Δρ γ . Indeed, experimental results for a Cu[Pt]/YIG bilayer structure, where the Cu/YIG interface is sputtered with Pt nanosize islands, show a noticeable oscillation in the γ scan [38], which can be explained within our theory assuming a nonzero g i  and q q 1 1 2 >˜, cf figure 3(b). This effect is quite pronounced due to an enhancement of the anisotropy of the spin relaxation mechanism as the sputtered Pt exhibits Rashba spin-orbit coupling [38].…”

Section: Discussionmentioning

confidence: 52%

“…Notice also that recent experiments in Pt thin films on MgO and GaAs substrates show evidence of Rashba-like spin-orbit coupling [37]. Analogously, thin films with built-in asymmetry, such as the Pt-decorated Cu[Pt]/YIG setup studied in [38], can be considered as effective Rashba metals.…”

Section: Introductionmentioning

confidence: 94%

“…For example: (i) inversion-asymmetric metal/(insulating)substrate bilayers, as long as the thickness d of the metallic layer does not substantially exceed the electronic phasecoherence length. Such a condition, which in particular justifies an anisotropic effective mass, is easily met in low-temperature experiments [37]; (ii) intrinsically anisotropic 'decorated' bilayers, such as the Cu[Pt]/YIG setup studied in [38], where Cu is sputtered with Pt nanoislands.…”

Section: The Modelmentioning

confidence: 99%

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Quasiclassical theory of the spin–orbit magnetoresistance of three-dimensional Rashba metals

et al. 2018

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The magnetoresistance of a three-dimensional Rashba metal placed on top of a ferromagnetic insulator is theoretically investigated. In addition to the intrinsic Rashba spin-orbit interaction, we consider extrinsic spin-orbit coupling via side-jump and skew scattering, as well as Elliott-Yafet spin relaxation. The latter is anisotropic due to the mass anisotropy which reflects the noncentrosymmetric crystal structure. A quasiclassical approach is employed to derive coupled spin-diffusion equations, which are supplemented by boundary conditions that account for the spin-transfer torque at the interface of the bilayer. The magnetoresistance is fully determined by the current-induced spin polarization, i.e., it cannot in general be ascribed to a single (bulk) spin Hall angle. Our theory reproduces several features of the experiments, at least qualitatively, and contains established phenomenological results in the relevant limiting cases. In particular, the anisotropy of the Elliott-Yafet spin relaxation mechanism plays a major role for the interpretation of the observed magnetoresistance. Recently, a new type of spin-orbit-dependent magnetoresistance has gained considerable attention, the Rashba-Edelstein magnetoresistance [16,17]. It relies on the inverse spin galvanic effect [18-20], a currentinduced spin polarization due to spin-orbit coupling [21,22], also known as Edelstein or Rashba-Edelstein effect [23] in systems with Rashba spin-orbit coupling [24,25]. A typical experimental setup consists of a substrate/normal-metal/ferromagnet trilayer with a two-dimensional electron gas (2DEG) at the substrate/ normal-metal interface. The magnetoresistance is usually explained as follows [16]: a current-induced spin polarization in the 2DEG leads to a spin current which flows through the normal metal, gets reflected at the normal-metal/ferromagnet interface, and is then converted back again to a charge current in the 2DEG via the spin galvanic effect [26,27].However, in dirty Rashba systems the interplay between extrinsic effects (due to impurities) and intrinsic effects (due to the band or device structure) leads to a non-trivial interaction of spin densities and spin currents [2,28]. Accordingly, the various spin-orbit signatures, e.g. via the spin galvanic and the (in-plane) inverse spin Hall effect, in charge signals are hard to separate [29,30], eventually leading to a non-trivial magnetization dependence of the magnetoresistance [31]. Additional contributions such as the anisotropic magnetoresistance OPEN ACCESS

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Section: Discussionmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 94%

Section: The Modelmentioning

confidence: 99%

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Quasiclassical theory of the spin–orbit magnetoresistance of three-dimensional Rashba metals

et al. 2018

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“…Besides the MR effect in single FM layers, in magnetic bilayers with Pt and ferrimagnetic insulators, such as YIG, the SMR effect with the characteristic relation of ρ x = ρ z > ρ y has been reported [6], and was interpreted by the spin-charge conversions caused by the spin Hall effect and inverse spin Hall effect. The REMR in Bi/Ag/CoFeB [9] and SOT-MR in YIG/Pt/Cu [10] have a similar relation of ρ x = ρ z > ρ y , which is caused by the interfacial spin-orbit coupling.…”

Section: Introductionmentioning

confidence: 85%

“…Recently, the discovery of several types of MR effects with different origins has triggered renewed interest in spin-dependent MR. These MR effects include spin Hall magnetoresistance (SMR) in FM/heavy metal bilayers [6][7][8], Rashba-Edelstein magnetoresistance (REMR) in Bi/Ag/CoFeB [9], spin-orbit magnetoresistance (SOT-MR) in a YIG/Pt/Cu system [10], Hanle magnetoresistance (HMR) in HMs [11], anisotropic interfacial magnetoresistance (AIMR) in Pt/Co/Pt [12,13], and anomalous Hall MR (AHMR) in single FM layers [14][15][16]. In a particular magnetic system, several types of MR could coexist.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Hall magnetoresistance in single-crystal Fe(001) films

Jia

Chen

et al. 2020

New J. Phys.

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The angular-dependent magnetoresistance (MR) in epitaxial Fe(001) films grown on MgO(001) is systematically investigated at room temperature. The resistivities with in-plane magnetic fields parallel (ρ x ) and transverse (ρ y ) to a current and a perpendicular field (ρ z ) show a correlation of ρ z ≈ ρ x > ρ y for Fe film thickness (d Fe ) between 3 and 50 nm, which is distinctly different from the conventional anisotropic MR relation of ρ x > ρ y ≈ ρ z . The dependence of such unusual MR on d Fe is quantitatively explained by the competition between the anomalous Hall MR, intrinsic anisotropic MR, and the MR induced by the geometrical size effect in Fe films. Our results also reveal the strong four-fold symmetric terms in the measured angular-dependent MR with a linear dependence of 1/d Fe .

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Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

et al. 2018

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Complex metal oxides, which show a variety of functional properties such as ferromagnetism, ferroelectricity, multi-ferroelectricity, superconductivity, and ionic conduction, have attracted much attention in the past decades. These exotic physical properties arise from a complex hierarchy of competing interactions among spin, charge, orbital, and lattice degrees of freedom. The development of advanced characterization techniques such as electron microscopy, neutron scattering, synchrotron scattering and imaging, spectroscopy at high magnetic fields, and others has enabled us to study the interactions among these degrees of freedom coupled with strain, defect, and interface Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized. Thin FilmsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201803241. 12 11 12where c 11 and c 12 are elastic moduli of the film material. Epitaxial strain gradually changes with film thickness in perovskite manganites. Figure 3 shows reciprocal space mapping or RSM (103) of La 0.7 Ca 0.3 MnO 3 (LCMO) films on STO (001) substrates. It captures the gradual strain relaxation process with increasing film thickness in manganite thin films. When the film is very thin, the interface is coherent with

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Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators

Abstract: A new type of spin-orbit magnetoresistance effect is observed in Cu/YIG with interface decorated with nanosize Pt islands.

Cited by 36 publications

References 51 publications

Quasiclassical theory of the spin–orbit magnetoresistance of three-dimensional Rashba metals

Quasiclassical theory of the spin–orbit magnetoresistance of three-dimensional Rashba metals

Anomalous Hall magnetoresistance in single-crystal Fe(001) films

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

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