Observation of stimulated Raman amplification in silicon waveguides

Claps, R.; Dimitropoulos, D.; Raghunathan, Varun; Han, Young-Hee; Jalali, Bahram

doi:10.1364/oe.11.001731

Cited by 386 publications

(212 citation statements)

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“…Unlike the group-III/V materials, the indirect band gap of silicon prohibits effi cient radiative recombination of carriers. A major milestone in the development of silicon photonics was reached with the demonstration of effi cient silicon Raman amplifi ers [17,18] and a room-temperature continuous-wave (CW) Raman laser [19] that can be fully integrated with CMOS circuits. Raman scattering in silicon is much stronger than in silicon dioxide because of the well-defi ned crystal lattice of silicon.…”

Section: Silicon Integrated Lasersmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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Section: Silicon Integrated Lasersmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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“…The loss is clearly dependent on technology, but typical values between 1-2 dB/cm/n g have been reported, 14 while reported values for the Raman gain vary over a wide range (4.3-76 cm/GW). [17][18][19] Note that we have chosen a realistically achievable value for κ (Ref. 14) and a conservative value for g R .…”

Section: Simplified Model: the Difference Between S S And S Pmentioning

confidence: 99%

Scaling of Raman amplification in realistic slow-light photonic crystal waveguides

et al. 2011

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The prospect for low pump-power Raman amplification in silicon waveguides has recently been boosted by theoretical studies discussing the enhancement of nonlinear phenomena in slow-light structures. In principle, the slowing down of either the pump or the signal beam is equivalent in terms of Raman gain, but in the presence of losses, we show that they play different roles in determining the net signal gain. We also investigate the impact of the mode profile in realistic slow-light waveguides on the total gain, an effect that is usually neglected in the context of stimulated Raman scattering. By taking representative losses and mode shapes into account, we provide a realistic estimation of the achievable performance of slow-light photonic crystal waveguides.

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“…The CW operation is an important step in the development of silicon Raman lasers [4][5][6]. A growing interest in the SRS based lasers caused that numerous experimental and theo− retical studies have been proposed in literature describing this effect [4][5][6][7][8][9][10][11][12]. The model for the SOI Raman laser pre− sented in Ref.…”

Section: Introductionmentioning

confidence: 99%

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

Tyszka-Zawadzka

Szczepanski

Mossakowska-Wyszyńska

et al. 2013

Opto-Electronics Review

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An approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.

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Observation of stimulated Raman amplification in silicon waveguides

Cited by 386 publications

References 0 publications

Device engineering for silicon photonics

Device engineering for silicon photonics

Scaling of Raman amplification in realistic slow-light photonic crystal waveguides

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

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