Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures

Abstract

Articles you may be interested inDetection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and PtWe performed spin pumping experiment on high quality, epitaxial Fe 3 Si/GaAs structures grown by molecular beam epitaxy. By tailoring the thickness and doping (n, p) level of the conducting GaAs epi-layer, thermal heating common of ferromagnetic metal/semiconductor heterostructure was removed effectively. A large inverse spin Hall Effect (ISHE) voltage up to 49.2 lV was observed for Fe 3 Si/p-GaAs. Smaller ISHE voltage (V ISHE ) by a factor of $0.4 was obtained for Fe 3 Si/n-GaAs, as scaled with its resistivity. By taking into account of the "self-induced" ISHE apparently observed in our samples, the minimum value of spin Hall angle h ISHE for n-GaAs and p-GaAs was estimated to be 1.9 Â 10 À4 and 2.8 Â 10 À5 , respectively. V C 2014 AIP Publishing LLC.

FMR-driven spin pumping in Y3Fe5O12-based structures

“…La 0.7 Sr 0.3 MnO 3 ) [64][65][66], intermetallics (e.g. Fe 3 Si) [67,68], and Fe 4 N [69], have been used for spin pumping experiments.…”