Observation of Superconductivity in Granular Bi Nanowires Fabricated by Electrodeposition

Tian, Mingliang; Wang, Jinguo; Kumar, Nitesh; Han, Tianheng; Kobayashi, Yoji; Liu, Ying; Mallouk, Thomas E.; Chan, Moses H. W.

doi:10.1021/nl0618041

Cited by 84 publications

(90 citation statements)

References 51 publications

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“…This structural memory effect may present an important route in defect engineering for creating materials. has been reported in twisted Bi-I bicrystals (22)(23)(24), Bi-I single crystalline and granular nanowires by electrochemically depositing Bi into porous polycarbonate membrane (25)(26)(27), and granular films of Bi clusters (28,29). These observed superconducting behaviors are related to either surface, such as grain boundaries (25)(26)(27) and twisted interfaces (22)(23)(24), or electronic properties of nanometer-sized Bi clusters (29).…”

Section: Significancementioning

confidence: 98%

Deep melting reveals liquid structural memory and anomalous ferromagnetism in bismuth

Shu

Wang

et al. 2017

Proc. Natl. Acad. Sci. U.S.A.

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As an archetypal semimetal with complex and anisotropic Fermi surface and unusual electric properties (e.g., high electrical resistance, large magnetoresistance, and giant Hall effect), bismuth (Bi) has played a critical role in metal physics. In general, Bi displays diamagnetism with a high volumetric susceptibility (∼10 −4 ). Here, we report unusual ferromagnetism in bulk Bi samples recovered from a molten state at pressures of 1.4-2.5 GPa and temperatures above ∼1,250 K. The ferromagnetism is associated with a surprising structural memory effect in the molten state. On heating, low-temperature Bi liquid (L) transforms to a more randomly disordered high-temperature liquid (L ) around 1,250 K. By cooling from above 1,250 K, certain structural characteristics of liquid L are preserved in L. Bi clusters with characteristics of the liquid L motifs are further preserved through solidification into the Bi-II phase across the pressure-independent melting curve, which may be responsible for the observed ferromagnetism.bismuth | high pressure | ferromagnetism | melt structure B ismuth (Bi) has played important roles in metal and condensed matter physics. The extremely low carrier density of Bi allows quantum limits of the Landau level to be studied under high magnetic field (1) and quantum size effects to be observed at ∼100-nm length scale (2). At ambient condition, Bi is known to crystallize in the rhombohedral A-7 type structure (space group R-3m, D 5 3d ), with the primitive unit cell containing two atoms at positions (u, u, u) and (−u, −u, −u). Each atom has three equidistant nearest neighbors tightly bonded at a distance of ∼3.062Å (3). The Bi4 motifs form puckered bilayers ( Fig. S1A) with a thickness of 1.59Å stacked along the rhombohedral [111] direction. The distance between adjacent bilayers is 2.35Å (4), slightly smaller than the next nearest distance of 3.512Å (5). Each atom's next nearest neighbors are in the adjacent bilayers, and the bonding within each bilayer is much stronger than the interbilayer bonding. As such, Bi exhibits rather complex interatomic binding, with coexisting covalent (within the bilayers), metallic, and weaker van der Waals-like (between bilayers) bonding (4).The phase diagram of Bi is rich and complex ( Fig. 1). At ambient pressure, Bi melts at 544 K (6) with a liquid-liquid transition at 1,010 K (7). With increasing pressure, Bi undergoes structural transitions in both solid and liquid states. The A-7 structured Bi-I phase transforms successively into the monoclinic (Bi-II), incommensurate host-guest (Bi-III), and body-centered cubic (Bi-V) phases (8-10) with increasing pressure to ∼6 GPa. On pressure release, these high-pressure metallic crystalline phases are unstable and revert to the Bi-I phase. Below ∼1.6 GPa, the melting temperature of Bi-I decreases with increasing pressure, a behavior similar to that of ice. Between 1.6 and 2.4 GPa (11), the solid just below melting is the Bi-II phase, which has a similar bilayer structure to that of Bi-I, except that the distance betwe...

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Section: Significancementioning

confidence: 98%

Deep melting reveals liquid structural memory and anomalous ferromagnetism in bismuth

Shu

Wang

et al. 2017

Proc. Natl. Acad. Sci. U.S.A.

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“…These structures are reminiscent of natural cross-whisker junctions of high temperature superconductors [17]. Given the reports of the observation of superconductivity in low dimensional bismuth [18], such cross-overs may offer a route to fabricate Josephson junctions. Figure 6 shows the equivalent micrographs as Figure 5 but using a Si(111) substrate.…”

Section: Influence Of Substratesmentioning

confidence: 99%

An investigation of the growth of bismuth whiskers and nanowires during physical vapour deposition

Stanley¹,

Stuttle²,

Caruana³

et al. 2012

J. Phys. D: Appl. Phys.

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Bismuth thin films of thickness in the region of 500 nm have been prepared by planar magnetron sputtering onto glass, silicon and GaAs substrates. Electron microscopy of these films reveals that bismuth whiskers grow spontaneously when the substrate is heated to temperatures between 110ºC and 140ºC during deposition and the optimum temperature for such growth is largely independent of substrate. Depositing films under similar conditions using thermal evaporation does not, however, produce the whisker growth. X-ray diffraction has been employed to investigate film texture with temperature and it has been shown that the and has a higher change-over temperature. The whiskers that grow from the film emerge at off-normal angles between 43.3º and 69.2º with a mean of 54±3º. The projected length of whiskers on a 500 nm film on a GaAs substrate shows a wide distribution to a maximum of more than 100 µm. The mean projected length for this sample was 16±1 µm and the diameter is around 0.5 µm. Measurements of the electrical properties of the whiskers at room temperature reveals ohmic behaviour with an estimated resistivity of 2.2±0.2 µΩm. Detailed examination of scanning electron micrographs, eliminates all growth mechanisms except tip growth by a non-catalysed vapour-solid/vapour-liquid-solid method. By depositing thinner films it is shown that this spontaneous growth of whiskers offers a route to fabricate high quality bismuth nanowires of lengths exceeding 10 µm.2

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“…In addition, a dependence of the low temperature resistance of individual single-crystal bismuth nanowires on the AharonovBohm phase of the magnetic flux threading the wire was reported (Nikolaeva et al, 2008). Recently, also superconductivity was reported for nano-granular bismuth nanowires that were prepared electrochemically (Tian et al, 2006). The critical temperatures T c amount to 7.2 and 8.3 K which coincide with T c values of the high-pressure phases Bi-III and Bi-V formed at 2.7 and 7.7 GPa, respectively.…”

Section: Finite-size Effectsmentioning

confidence: 99%

Finite- and Quantum-Size Effects of Bismuth Nanowires

Cornelius¹,

Toimil-Molares²

2010

Nanowires

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Observation of Superconductivity in Granular Bi Nanowires Fabricated by Electrodeposition

Cited by 84 publications

References 51 publications

Deep melting reveals liquid structural memory and anomalous ferromagnetism in bismuth

Deep melting reveals liquid structural memory and anomalous ferromagnetism in bismuth

An investigation of the growth of bismuth whiskers and nanowires during physical vapour deposition

Finite- and Quantum-Size Effects of Bismuth Nanowires

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