Observation of symmetery forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum well

Shen, H.; Parayanthal, P.; Pollak, Fred H.; Smirl, Arthur L.; Schulman, J. N.; McFarlane, R. A.; D’Haenens, I. J.

doi:10.1016/0038-1098(86)90058-x

Cited by 28 publications

(2 citation statements)

References 14 publications

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“…1͑b͒. 29,32 We attribute this feature to the transition from the first confined light-hole state to the second unconfined conduction subband, i.e., 131 ͑c͒, see Table II. 29,32 We attribute this feature to the transition from the first confined light-hole state to the second unconfined conduction subband, i.e., 131 ͑c͒, see Table II.…”

Section: Resultsmentioning

confidence: 98%

Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states

Chen

Chan

Jan

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photoreflectance investigation of InAs quantum dashes embedded in In 0.53 Ga 0.47 As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum well grown on InP substrate Photoluminescence and photo-modulated reflectance spectra of ion-implanted GaAs/AlGaAs coupled quantum wells Quasiphase matched surface emitting second harmonic generation in periodically reversed asymmetric GaAs/AlGaAs quantum well waveguide Photoreflectance ͑PR͒ spectra of GaAs/AlGaAs multiple quantum well waveguides at room temperature were investigated. In addition to the allowed and symmetry forbidden transitions between confined states, a number of transitions involving the unconfined states were also observed. The coupling between the multiple wells ͑miniband dispersion͒ of both confined states and unconfined states ͑above barrier band gap͒ were reported. By using the propagation-matrix method, the energies for both confined transitions and unconfined transitions were calculated and shown to agree with the experimental values determined by fitting the PR spectra to the theoretical line shape expression.

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Section: Resultsmentioning

confidence: 98%

Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states

Chen

Chan

Jan

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…It may lead to mismatches in the identification of It is possible, that the discussed effect was the cause of observation of symmetryforbidden transitions in the room temperature photoreflectance spectrum of GaAs/ GaAlAs multiple quantum well reported in Ref. [5].…”

Section: Field Dependence Of Interband Optical Transition Probabilitiesmentioning

confidence: 99%

Simulation of Photoreflectance and Phototransmittance Excitonic Spectra Applied to Quantum Well Characterization

Lazarenkova

Pikhtin

1999

phys. stat. sol. (a)

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In order to simulate photoreflectance and phototransmittance excitonic spectra, the effect of electric field on reflectance and absorbance both of multiple and single quantum wells has been considered. Strong and very intricate electric field dependences of the probability of optical transitions between electron and hole states have been obtained. The quantity of the maxima in these dependences equals the least number of the quasi‐bound states. The field dependences are presented in dimensionless form and may be used for multiple and single quantum wells with different parameters.

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Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo‐ and electroreflectance methods

Pikhtin

Комков

Bugge

2005

Physica Status Solidi (a)

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The influence of an electric field on the energy spectrum and the probability of optical transitions in InGaAs/GaAs single quantum wells (QWs) of different widths has been investigated with photo-and electroreflectance techniques. The electric field in the area of a QW is varied in a wide range and controlled by well-defined Franz -Keldysh oscillations. A quadratic red shift of electroreflectance features concerned with interband excitonic transitions in QWs is observed. The electric field dependence of the intensity of these features and calculated data for the probability of optical transitions are compared. There are some field values when transitions that are symmetry-forbidden in zero field are much stronger than symmetry-allowed transitions. Original PaperThe possibility of modifying the electron wave function and the optical transition probability by an electric field in QWs has opened up fresh opportunities for nano-and optoelectronic devices. For example, it will be possible to tune characteristics of resonant tunneling devices, intersubband photodetectors, and cascade lasers.

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Observation of symmetery forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum well

Cited by 28 publications

References 14 publications

Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states

Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states

Simulation of Photoreflectance and Phototransmittance Excitonic Spectra Applied to Quantum Well Characterization

Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo‐ and electroreflectance methods

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