Observation of the graphite surface by reflection electron microscopy during STM operation

Spence, John C. H.; Lo, Wai Hung; Kuwabara, M.

doi:10.1016/0304-3991(90)90009-b

Cited by 33 publications

(10 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Kuwabara and Spence first reported combined STM-TEM experiments for reflection electron microscope imaging of PbS 31 and graphite. 32 The STM-TEM specimen holder utilized in this study allows the simultaneous cross-sectional atomic-scale characterization of interfaces while inducing electrical stress on the device structure. The evolution of structural defects that is characteristic for SBD and HBD stages are evaluated and discussed.…”

Section: Introductionmentioning

confidence: 99%

Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress

Bonifacio

Benthem

2012

Journal of Applied Physics

View full text Add to dashboard Cite

The structural evolution of ultrathin dielectric SiO2 layers within a Co-silicide/poly-Si/SiO2/Si multilayer system was studied by in situ transmission electron microscopy (TEM). The interface structure represents a model system for field effect transistors with a SiO2 dielectric layer. Electrical bias was applied across the interfaces of cross sectional TEM samples using a scanning tunneling microscopy (STM) tip. Atomic structure modifications of the dielectric layer due to the applied electrical field were observed by this in situ STM-TEM technique. Constant bias (+5.0 V) and ramped bias (+3.0 to +10.5 V) stresses applied to the CoSi2 gate electrode resulted in a loss in capacitance of the dielectric layer consistent with descriptions of soft dielectric breakdown (SBD) and hard dielectric breakdown (HBD). It was found that SBD events are characterized by fluctuations within uniform current step increase of 21 nA and increased roughness of the SiO2 film due to oxygen vacancy percolation. HBD, however, was found to be preceded by multiple SBD events between +6.5 V and +10 V, cobalt atom migration into the dielectric layer, partial crystallization of the amorphous gate dielectric (dielectric breakdown induced epitaxy), and significant diffusion of oxygen from the SiO2 layer into the silicon substrate through a reduction-oxidation reaction of the Si/SiO2 interface. Experimental results demonstrate the feasibility of in situ STM-TEM experiments for studying time-dependent dielectric breakdown behaviors to obtain a direct correlation of individual defect structures and their corresponding electrical signatures. Experimental limitations of this new technique are critically discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress

Bonifacio

Benthem

2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Several combination type microscopes of reflection electron microscopy (REM) and STM have been attempted by Kuwabara et al, 20 Spence et al [21][22][23] and Lutwyche et al 24 In the present study, the crossed lattice fringes are clearly observed on the tips during the contact or noncontact type surface scanning. The present observation thus shows a new possibility of atomistic visualization of the surface scanning in STM.…”

Section: Surface Scanningmentioning

confidence: 54%

Atomistic Visualization of Mechanical Interaction in Gold Crystalline Boundaries by Time-Resolved High Resolution Transmission Electron Microscopy

Kizuka

1998

Surf. Rev. Lett.

View full text Add to dashboard Cite

The atomic processes in mechanical interaction were visualized by time-resolved high resolution transmission electron microscopy at a spatial resolution of 0.2 nm and a time resolution of 1/60 s.Nanometer-sized tips of gold were approached, contacted, bonded, deformed and fractured inside a 200 kV electron microscope using a piezo-driving specimen holder. The crystallographic boundary formed after the contact. A few layers near the surfaces and bonding boundaries were responsible for the approach, contact and bonding processes. Atomic scale mechanical tests, such as the friction test, compressing, tensile and shear deformation tests, were proposed. A new type of mechanical processing at one-atomic-layer resolution was demonstrated. Atomic scale contact or noncontact type surface scanning similar to that in atomic force microscopy was also performed with the gold tips. *

show abstract

“…The earliest STM instrument inside a TEM by Spence et al was mainly considered to be a complementary microscope for surface imaging [27,37,38]. Other early studies include the work by Takayanagi et al on the interaction between a STM tip and a sample [2,29].…”

Section: Applications Of Temstmmentioning

confidence: 98%

Combining Scanning Probe Microscopy and Transmission Electron Microscopy

Nafari¹,

Angenete²,

Svensson

et al. 2010

Scanning Probe Microscopy in Nanoscience and Nanotechnology 2

View full text Add to dashboard Cite

This chapter is a review of an in situ method where a scanning probe microscope (SPM) has been combined with a transmission electron microscope (TEM). By inserting a miniaturized SPM inside a TEM, a large set of open problems can be addressed and, perhaps more importantly, one may start to think about experiments in a new kind of laboratory, an in situ TEM probing laboratory, where the TEM is transformed from a microscope for still images to a real-time local probing tool. In this method, called TEMSPM, the TEM is used for imaging and analysis of a sample and SPM tip, while the SPM is used for probing of electrical and mechanical properties or for local manipulation of the sample. This chapter covers both instrumental and applicational aspects of TEMSPM. Abbreviations

show abstract

Observation of the graphite surface by reflection electron microscopy during STM operation

Cited by 33 publications

References 19 publications

Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress

Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress

Atomistic Visualization of Mechanical Interaction in Gold Crystalline Boundaries by Time-Resolved High Resolution Transmission Electron Microscopy

Combining Scanning Probe Microscopy and Transmission Electron Microscopy

Contact Info

Product

Resources

About