Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition

Abstract

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Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC

“…The observed energy position and capture cross section of the D level agree well with the reported values of the well known D center, 1,10,11 which has been observed in Bimplanted or B-doped CVD grown SiC. Indeed, electron paramagnetic resonance ͑EPR͒ measurements associate the D center with a boron-vacancy complex.…”

Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

“…The incorporation of the shallow B and Ti has shown to increase with increasing C/Si ratio, which has been explained in terms of site-competition principle sine both types of impurities are believed to occupy Si site [77]. It is also observed that D-center concentration is reduced under C-rich condition for 6H-SiC, which implies the association of a carbon vacancy complex with the D-center [84]. Studies on the microscopic and electronic structure of those defects are still needed to provide further guidance for growth process optimization.…”

Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

“…Moreover, the recombination which dominates at elevated temperatures with PL peak around 2.10-2.14 eV is related to the well-known D-center. The determination of the energy level of D-center is still in controversial [8,13,14], and there is still lack of direct experimental approach to determine the lattice structure of either the D-center or the D * -center. The possible molecular configurations of the D-center have been predicted by first-principles calculations [15][16][17].…”